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Chemistry and Dynamics of Ge in Kesterite: Toward Band-Gap-Graded Absorbers
Chemistry of Materials ( IF 7.2 ) Pub Date : 2017-11-01 00:00:00 , DOI: 10.1021/acs.chemmater.7b03416 José Márquez 1 , Helena Stange 2 , Charles J. Hages 1 , Norbert Schaefer 1 , Sergiu Levcenko 1 , Sergio Giraldo 3 , Edgardo Saucedo 3 , Klaus Schwarzburg 1 , Daniel Abou-Ras 1 , Alex Redinger 1, 4 , Manuela Klaus 1 , Christoph Genzel 1 , Thomas Unold 1 , Roland Mainz 1
Chemistry of Materials ( IF 7.2 ) Pub Date : 2017-11-01 00:00:00 , DOI: 10.1021/acs.chemmater.7b03416 José Márquez 1 , Helena Stange 2 , Charles J. Hages 1 , Norbert Schaefer 1 , Sergiu Levcenko 1 , Sergio Giraldo 3 , Edgardo Saucedo 3 , Klaus Schwarzburg 1 , Daniel Abou-Ras 1 , Alex Redinger 1, 4 , Manuela Klaus 1 , Christoph Genzel 1 , Thomas Unold 1 , Roland Mainz 1
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The selenization of metallic Cu–Zn–Sn–Ge precursors is a promising route for the fabrication of low-cost and efficient kesterite thin-film solar cells. Nowadays, efficiencies of kesterite solar cells are still below 13%. For Cu(In,Ga)Se2 solar cells, the formation of compositional gradients along the depth of the absorber layer has been demonstrated to be a key requirement for producing thin-film solar cells with conversion efficiencies above the 22% level. No clear understanding has been reached so far about how to produce these gradients in an efficient manner for kesterite compounds, but among the possible candidates, Ge arises as one of the most promising ones. In the present work, we evaluate the potential of incorporating Ge in Cu2ZnSnSe4 to produce compositional gradients in kesterites. Synchrotron-based in situ energy-dispersive X-ray diffraction and X-ray fluorescence have been used to study the selenization of Cu–Zn–Sn–Ge metallic precursors. We propose a reaction mechanism for the incorporation of Ge atoms into the kesterite lattice after the formation of Cu2ZnSnSe4. Electron microscopy reveals that the annealing process leads to Cu2Zn(Sn,Ge)Se4 absorber layers with an increase of Ge content toward the back contact with independence of the original location of Ge in the precursor layer. The effect of the Ge gradient on the optoelectronic properties of the absorber layer has been evaluated with room-temperature cathodoluminescence. The implications of the results for the development of kesterite solar cells are discussed, with the aim of encouraging new synthesis routes for compositionally graded absorbers.
中文翻译：
Kesterite中Ge的化学和动力学：带隙梯度吸收剂
金属Cu–Zn–Sn–Ge前驱体的硒化是制造低成本，高效Kesterite薄膜太阳能电池的有前途的途径。如今，硅藻土太阳能电池的效率仍低于13％。对于Cu（In，Ga）Se 2太阳能电池，已证明沿吸收层深度形成成分梯度是生产转换效率高于22％的薄膜太阳能电池的关键要求。迄今为止，对于如何高效地生成钾盐沸石化合物尚未产生这些梯度，目前尚无明确的了解，但在可能的候选物中，Ge成为最有前途的化合物之一。在当前的工作中，我们评估了将Ge掺入Cu 2 ZnSnSe 4中的潜力在钾长石中产生成分梯度。基于同步加速器的原位能量色散X射线衍射和X射线荧光已用于研究Cu-Zn-Sn-Ge金属前驱体的硒化。我们提出了一种在Cu 2 ZnSnSe 4形成后将Ge原子掺入钙钛矿晶格的反应机理。电子显微镜显示，退火过程导致Cu 2 Zn（Sn，Ge）Se 4在背接触中，Ge含量增加的吸收体层与Ge在前体层中的原始位置无关。已经通过室温阴极发光来评估Ge梯度对吸收层的光电性能的影响。讨论了该结果对硅藻土太阳能电池开发的意义，目的是鼓励采用新的合成方法制备组成渐变的吸收剂。
更新日期：2017-11-01
中文翻译：
Kesterite中Ge的化学和动力学：带隙梯度吸收剂
金属Cu–Zn–Sn–Ge前驱体的硒化是制造低成本，高效Kesterite薄膜太阳能电池的有前途的途径。如今，硅藻土太阳能电池的效率仍低于13％。对于Cu（In，Ga）Se 2太阳能电池，已证明沿吸收层深度形成成分梯度是生产转换效率高于22％的薄膜太阳能电池的关键要求。迄今为止，对于如何高效地生成钾盐沸石化合物尚未产生这些梯度，目前尚无明确的了解，但在可能的候选物中，Ge成为最有前途的化合物之一。在当前的工作中，我们评估了将Ge掺入Cu 2 ZnSnSe 4中的潜力在钾长石中产生成分梯度。基于同步加速器的原位能量色散X射线衍射和X射线荧光已用于研究Cu-Zn-Sn-Ge金属前驱体的硒化。我们提出了一种在Cu 2 ZnSnSe 4形成后将Ge原子掺入钙钛矿晶格的反应机理。电子显微镜显示，退火过程导致Cu 2 Zn（Sn，Ge）Se 4在背接触中，Ge含量增加的吸收体层与Ge在前体层中的原始位置无关。已经通过室温阴极发光来评估Ge梯度对吸收层的光电性能的影响。讨论了该结果对硅藻土太阳能电池开发的意义，目的是鼓励采用新的合成方法制备组成渐变的吸收剂。
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