We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO₂ templates along [110] with varying V/III ratios and temperatures using metal–organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

中文翻译：

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使用模板辅助选择性外延观察无双GaAs纳米线的生长

我们报告通过模板辅助选择性外延集成在Si（001）上的GaAs纳米线的结构表征。利用金属有机化学气相沉积法，纳米线沿着[110]在侧面SiO ₂模板中以不同的V / III比和温度生长。纳米线已经根据通常由（110）和（111）B平面组成的生长面进行了分类。发现表现出（111）B生长面的纳米线在所有研究的生长条件下均具有高密度的平面缺陷。但是，生长具有单个（110）生长面的GaAs纳米线而没有形成平面堆叠缺陷，从而生成了纯锌共混物晶体。