Phase separation and electrical performance of bithienopyrroledione polymer semiconductors embedded in insulating polymers,Materials Chemistry Frontiers

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Phase separation and electrical performance of bithienopyrroledione polymer semiconductors embedded in insulating polymers
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2017-08-07 00:00:00 , DOI: 10.1039/c7qm00261k
Linjing Tang _{1,

2,

3,

4,

5} , Pan He _{1,

2,

3,

4,

5} , Xiaolan Qiao _{1,

2,

3,

4,

5} , Qun Qian _{5,

6,

7,

8} , Hongxiang Li _{1,

2,

3,

4,

5}

Affiliation

Bithienopyrroledione (1,1′-bithieno[3,4-c]pyrrole-4,4′,6,6′-tetraone (bi-TPD)) based copolymer P1 was synthesized and characterized. Its phase separation characteristics in a P1/PMMA blend were investigated. It was found that P1 formed microsized fibers in the P1/PMMA blend and dispersed into the whole blend system. Thin film field-effect transistors using P1 films and P1/PMMA blend films as active layers were fabricated. Both devices showed p-type charge carrier transport properties under ambient conditions and ambipolar charge carrier transport behavior in a N₂ atmosphere. Under ambient conditions, the P1 film transistors displayed a hole mobility of 0.48 cm² V⁻¹ s⁻¹, and the blend film devices exhibited comparable performance with a hole mobility of 0.32 cm² V⁻¹ s⁻¹. In a N₂ atmosphere, the performance of the blend film transistors was largely improved compared with that of the P1 film ones. The hole/electron mobilities were 0.10/0.05 cm² V⁻¹ s⁻¹ for the blend film transistors and 0.02/0.002 cm² V⁻¹ s⁻¹ for the P1 film devices. All these results demonstrate the potential applications of bi-TPD based polymer semiconductors in high performance blend film transistors.

中文翻译：

嵌入绝缘聚合物中的苯并吡咯二酮聚合物半导体的相分离和电性能

Bithienopyrroledione（1,1'- bithieno [3,4 Ç ]吡咯-4,4'，6,6'-四酮（BI-TPD））系共聚物P1的合成和表征。研究了其在P1 / PMMA共混物中的相分离特性。发现P1在P1 / PMMA共混物中形成超细纤维，并分散到整个共混体系中。制作了以P1膜和P1 / PMMA共混膜为有源层的薄膜场效应晶体管。两种器件在环境条件下均显示p型电荷载流子传输特性，并在N ₂气氛中表现出双极性电荷载流子传输行为。在环境条件下，P1薄膜晶体管显示出0.48 cm ² V ^-1 s ^-1的空穴迁移率，并且混合膜器件显示出相当的性能，其空穴迁移率为0.32 cm ² V ^-1 s ^-1。在N ₂气氛中，与P1薄膜晶体管相比，混合薄膜晶体管的性能大大提高。对于混合膜晶体管，空穴/电子迁移率是0.10 / 0.05 cm ² V ^-1 s ^-1，对于P1，空穴/电子迁移率是0.02 / 0.002 cm ² V ^-1 s ^-1电影设备。所有这些结果证明了基于双TPD的聚合物半导体在高性能混合膜晶体管中的潜在应用。

更新日期：2017-10-26

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