Self-assembled monolayers (SAMs) were applied to seal defects present in Al₂O₃ barrier layers fabricated on PEN substrate by plasma enhanced atomic layer deposition (PE-ALD), and the effects of the SAM in enhancing the barrier properties were studied. Pinhole defects of Al₂O₃ single layers were covered by SAM based on a 1-dodecanethiol (DDT) precursor. To investigate the formation of SAMs on Al₂O₃ layers, contact angle measurements and field–emission–transmission electron microscopy (FE-TEM) were employed. We found that the barrier properties of Al₂O₃ with SAM were significantly improved compared to those of Al₂O₃ single layers. The SAM/Al₂O₃/Ag/PEN multilayer structure showed a superior water vapor transmission rate (WVTR) less than 5.0 × 10⁻⁵ g m⁻² day⁻¹ at 38 °C and 100% relative humidity, demonstrating its applicability for flexible displays. Mechanical stability was investigated using U-folding bending test. The WVTR of the SAM/Al₂O₃/Ag/PEN multilayer remained less than 5.0 × 10⁻⁵ g m⁻² day⁻¹ after 25,000-cycles bending test using a 5 mm bending radius.

通过等离子体增强原子层沉积（PE-ALD），将自组装单分子膜（SAMs）应用于密封存在于PEN基板上的Al ₂ O ₃势垒层中的缺陷，并研究了SAM在增强势垒性能方面的作用。基于1-十二烷硫醇（DDT）前体的SAM覆盖了Al ₂ O ₃单层的针孔缺陷。为了研究在Al ₂ O ₃层上形成SAM的方法，采用了接触角测量和场发射-透射电子显微镜（FE-TEM）。我们发现，Al的阻隔性能₂ ö ₃与SAM进行了改进相比，这些的Al显著₂O _3个单层。SAM / Al ₂ O ₃ / Ag / PEN多层结构 在38°C和100％相对湿度下显示出小于5.0×10 ^-5  g m ^-2天^-1的优异水蒸气透过率（WVTR），证明了其适用于灵活的显示。使用U形折弯试验研究机械稳定性。在使用5mm弯曲半径的25,000次循环弯曲测试之后，SAM / Al ₂ O ₃ / Ag / PEN多层的WVTR保持小于5.0×10 ^-5  g m ^-2天^-1。