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Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
Organic Electronics ( IF 2.7 ) Pub Date : 2017-10-06 , DOI: 10.1016/j.orgel.2017.10.004
Hyun Gi Kim , Jong Geol Lee , Sung Soo Kim

Self-assembled monolayers (SAMs) were applied to seal defects present in Al2O3 barrier layers fabricated on PEN substrate by plasma enhanced atomic layer deposition (PE-ALD), and the effects of the SAM in enhancing the barrier properties were studied. Pinhole defects of Al2O3 single layers were covered by SAM based on a 1-dodecanethiol (DDT) precursor. To investigate the formation of SAMs on Al2O3 layers, contact angle measurements and field–emission–transmission electron microscopy (FE-TEM) were employed. We found that the barrier properties of Al2O3 with SAM were significantly improved compared to those of Al2O3 single layers. The SAM/Al2O3/Ag/PEN multilayer structure showed a superior water vapor transmission rate (WVTR) less than 5.0 × 10−5 g m−2 day−1 at 38 °C and 100% relative humidity, demonstrating its applicability for flexible displays. Mechanical stability was investigated using U-folding bending test. The WVTR of the SAM/Al2O3/Ag/PEN multilayer remained less than 5.0 × 10−5 g m−2 day−1 after 25,000-cycles bending test using a 5 mm bending radius.



中文翻译:

自组装单层作为通过原子层沉积法生长的Al 2 O 3阻挡层的缺陷密封剂

通过等离子体增强原子层沉积(PE-ALD),将自组装单分子膜(SAMs)应用于密封存在于PEN基板上的Al 2 O 3势垒层中的缺陷,并研究了SAM在增强势垒性能方面的作用。基于1-十二烷硫醇(DDT)前体的SAM覆盖了Al 2 O 3单层的针孔缺陷。为了研究在Al 2 O 3层上形成SAM的方法,采用了接触角测量和场发射-透射电子显微镜(FE-TEM)。我们发现,Al的阻隔性能2 ö 3与SAM进行了改进相比,这些的Al显著2O 3个单层。SAM / Al 2 O 3 / Ag / PEN多层结构 在38°C和100%相对湿度下显示出小于5.0×10 -5  g m -2-1的优异水蒸气透过率(WVTR),证明了其适用于灵活的显示。使用U形折弯试验研究机械稳定性。在使用5mm弯曲半径的25,000次循环弯曲测试之后,SAM / Al 2 O 3 / Ag / PEN多层的WVTR保持小于5.0×10 -5  g m -2-1

更新日期:2017-10-06
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