This comprehensive review, summarizes recent advances in the fabrication of well-ordered block copolymer (BCP) thin films by different methods, focusing on the development of silicon-containing BCPs as candidates for lithographic applications. With the advantage of Si-containing blocks, these BCPs offer much smaller feature sizes due to large segregation strength and high etch contrast for the fabrication of well-defined nanopatterns with high resolution. Considering that poly(dimethylsiloxane) (PDMS)-containing BCPs are widely studied systems among Si-containing BCPs, the possibility of using PDMS-containing BCPs for lithographic applications is demonstrated through previous and ongoing key research.

BCP lithography will lead to the development of next-generation microelectronic devices by providing a simple and scalable nanopatterning method for the fabrication of microelectronic devices in which the feature sizes and geometries are controlled by tuning the chain lengths and volume fractions of the block copolymers. The control of microdomain orientation and alignment in thin film BCPs is crucial for lithographic applications. The principles and limitations of various methods to orientation are discussed, including temperature-gradient, surface modifications, solvent annealing/evaporation and other new types of annealing process.

Directed self-assembly (DSA) of BCP on topographic or chemically patterned substrates has attracted a great attention from academic and industrial research since it offers the advantage of defect free nanopatterning at large scales. The key achievements in DSA methods are elaborated in the subsequent parts of this review. New trends for lithographic applications and the applications beyond lithography using Si-containing BCPs for nanopatterning are also discussed, and finally, concluding remarks and perspectives for BCP lithography are presented.

这份全面的综述总结了通过不同方法制造有序嵌段共聚物（BCP）薄膜的最新进展，重点是开发了用于光刻应用的含硅BCP。凭借含硅块的优势，这些BCP由于较大的偏析强度和较高的蚀刻对比度而提供了更小的特征尺寸，从而可制造具有高分辨率的轮廓分明的纳米图案。考虑到含聚二甲基硅氧烷（PDMS）的BCP是含硅BCP中广泛研究的系统，通过先前和正在进行的关键研究证明了将含PDMS的BCP用于光刻应用的可能性。

BCP光刻技术将通过提供一种用于制造微电子器件的简单且可扩展的纳米图案化方法来引领下一代微电子器件的发展，在微电子器件中，特征尺寸和几何形状可通过调节嵌段共聚物的链长和体积分数来控制。薄膜BCP中微区取向和对准的控制对于光刻应用至关重要。讨论了各种取向方法的原理和局限性，包括温度梯度，表面改性，溶剂退火/蒸发和其他新型退火工艺。

BCP在地形或化学图案化基材上的直接自组装（DSA）引起了学术和工业研究的极大关注，因为它具有大规模无缺陷纳米图案化的优势。DSA方法的关键成就将在本文的后续部分中详细阐述。还讨论了光刻应用的新趋势以及使用含硅BCP进行纳米图案化的光刻技术以外的其他应用，最后，对BCP光刻技术作了总结和展望。