A range of novel two-dimensional materials have been actively explored for More Moore and More-than-Moore device applications because of their ability to form van der Waals heterostructures with unique electronic properties. However, most of the reported electronic devices exhibit insufficient control of multifunctional operations. Here, we leverage the band-structure alignment properties of narrow-bandgap black phosphorus and large-bandgap molybdenum disulfide to realize vertical heterostructures with an ultrahigh rectifying ratio approaching 10⁶ and on–off ratio up to 10⁷. Furthermore, we design and fabricate tunable multivalue inverters, in which the output logic state and window of the mid-logic can be controlled by specific pairs of channel length and, most importantly, by the electric field, which shifts the band-structure alignment across the heterojunction. Finally, high gains over 150 are achieved in the inverters with optimized device geometries, showing great potential for future logic applications.

由于它们具有形成具有独特电子特性的范德华异质结构的能力，因此已经为Moore和Moore-than-Moore器件应用积极探索了一系列新颖的二维材料。然而，大多数报道的电子设备表现出对多功能操作的控制不足。在这里，我们利用窄带隙黑磷和大带隙二硫化钼的能带结构排列特性，实现了垂直异质结构，其超高整流比接近10 ⁶，通断比高达10 ^7。。此外，我们设计和制造可调谐的多值反相器，其中中间逻辑的输出逻辑状态和窗口可以通过特定的通道长度对（最重要的是通过电场）进行控制，这会改变整个结构的能带排列异质结。最终，采用优化的器件几何结构的逆变器可实现超过150的高增益，为未来的逻辑应用展示了巨大的潜力。