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Highly Localized Strain in a MoS2/Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-25 00:00:00 , DOI: 10.1021/acs.nanolett.7b02322
Mahfujur Rahaman 1 , Raul D. Rodriguez 1, 2 , Gerd Plechinger 3 , Stefan Moras 1 , Christian Schüller 3 , Tobias Korn 3 , Dietrich R. T. Zahn 1
Affiliation  

Tip-enhanced Raman spectroscopy (TERS) has been rapidly improved over the past decade and opened up opportunities to study phonon properties of materials at the nanometer scale. In this Letter, we report on TERS of an ultrathin MoS2 flake on a nanostructured Au on silicon surface forming a two-dimensional (2D) crystal/plasmonic heterostructure. Au nanostructures (shaped in triangles) are prepared by nanosphere lithography, and then MoS2 is mechanically exfoliated on top of them. The TERS spectra acquired under resonance conditions at 638 nm excitation wavelength evidence strain changes spatially localized to regions as small as 25 nm in TERS imaging. We observe the highest Raman intensity enhancement for MoS2 on top of Au nanotriangles due to the strong electromagnetic confinement between the tip and a single triangle. Our results enable us to determine the local strain in MoS2 induced during heterostructure formation. The maximum frequency shift of E2g mode is determined to be (4.2 ± 0.8) cm–1, corresponding to 1.4% of biaxial strain induced in the MoS2 layer. We find that the regions of maximum local strain correspond to the regions of maximum topographic curvature as extracted from atomic force microscopy measurements. This tip-enhanced Raman spectroscopy study allows us to determine the built-in strain that arises when 2D materials interact with other nanostructures.

中文翻译:

尖端增强拉曼光谱揭示的MoS 2 / Au异质结构中的高度局部应变

尖端增强拉曼光谱(TERS)在过去十年中得到了快速改善,并为研究纳米级材料的声子性质提供了机会。在这封信中,我们报道了在硅表面形成二维(2D)晶体/等离子体异质结构的纳米结构金上的超薄MoS 2薄片的TERS 。通过纳米球体光刻法制备金纳米结构(呈三角形),然后在其顶部机械剥离MoS 2。在共振条件下在638 nm激发波长处获得的TERS光谱证明,应变在空间上变化为TERS成像中的小至25 nm的区域。我们观察到MoS 2的最高拉曼强度增强由于尖端和单个三角形之间的强电磁限制,因此在Au纳米三角形的顶部形成了三角形。我们的结果使我们能够确定异质结构形成过程中诱导的MoS 2的局部应变。E 2g模式的最大频移确定为(4.2±0.8)cm -1,相当于在MoS 2层中引起的双轴应变的1.4%。我们发现,最大局部应变的区域对应于从原子力显微镜测量中提取的最大形貌曲率的区域。这项尖端拉曼光谱研究使我们能够确定2D材料与其他纳米结构相互作用时产生的内在应变。
更新日期:2017-09-26
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