Combining electronic Raman scattering experiments with cellular dynamical mean field theory, we present evidence of the pseudogap in the superconducting state of various hole-doped cuprates. In ${\mathrm{Bi}}_2{\mathrm{Sr}}_2{\mathrm{CaCu}}_2{\mathrm{O}}_{8+\delta }$ we track the superconducting pseudogap hallmark, a peak-dip feature, as a function of temperature $T$ and doping $p$, well beyond the optimal one. We show that, at all temperatures under the superconducting dome, the pseudogap disappears at the doping $p_c$, between 0.222 and 0.226, where also the normal-state pseudogap collapses at a Lifshitz transition. This demonstrates that the superconducting pseudogap boundary forms a vertical line in the $T-p$ phase diagram.

中文翻译：

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Bi2Sr2CaCu2O8 +δ的相图中超导圆顶下伪间隙的垂直温度边界

将电子拉曼散射实验与细胞动力学平均场理论相结合，我们提供了各种空穴掺杂铜酸盐在超导状态下伪间隙的证据。在${双}_{\mathrm{2个}}{r}_{\mathrm{2个}}{\mathrm{钙铜}}_{\mathrm{2个}}{\mathrm{Ø}}_{8+\delta }$ 我们跟踪温度随温度变化的超导伪间隙特征，即峰谷特征 $Ť$ 和掺杂 $p$，远远超出了最佳选择。我们表明，在超导圆顶下的所有温度下，伪间隙在掺杂处都消失了。$p_C$，在0.222和0.226之间，其中正常状态的伪间隙在Lifshitz跃迁处也崩溃。这证明了超导伪能隙边界在晶格中形成一条垂直线。$Ť-p$ 相图。