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Hollow cubic double layer structured Cu7S4/NiS nanocomposites for high-performance supercapacitors
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2017-09-08 00:00:00 , DOI: 10.1039/c7ta05784a
Hongliang Cao 1, 2, 3, 4, 5 , Xiang Wang 1, 2, 3, 4, 5 , Xin Chen 1, 2, 3, 4, 5 , Haiyang Liu 1, 2, 3, 4, 5 , Junsheng Zheng 6, 7, 8, 9, 10 , Wangfan Zhou 1, 2, 3, 4, 5
Affiliation  

A double layer hollow structured Cu7S4/NiS material is synthesized using a self-generated sacrificial template method, as an electrode material for supercapacitors. Cu7S4/NiS composites with three different particle sizes are synthesized and tested, which exhibited high specific capacitances of 1204 F g−1, 1028 F g−1 and 857 F g−1, respectively, at a current density of 1 A g−1. The specific capacitance of the nanocomposites remained at 945.5 F g−1 (85.8%), 719.2 F g−1 (84.32%) and 558.5 F g−1 (80.13%) levels after 1000 cycles, respectively, at a current density of 4 A g−1, showing good cycle stability. Compared with the pure NiS and Cu7S4, the development of the hollow Cu7S4/NiS composites is demonstrated to be effective in enhancing the supercapacitive performance.

中文翻译:

中空立方双层结构化Cu 7 S 4 / NiS纳米复合材料,用于高性能超级电容器

使用自生牺牲模板法合成双层中空结构的Cu 7 S 4 / NiS材料,作为超级电容器的电极材料。铜7小号4 / NIS复合材料用三种不同颗粒尺寸合成和测试,这显示出1204 F G高的比电容-1,1028 F G -1和857 F G -1,分别在1倍的电流密度g -1。纳米复合材料的比电容保持在945.5 F g -1(85.8%),719.2 F g -1(84.32%)和558.5 F g -1在电流密度为4 A g -1的情况下,分别经过1000次循环后(80.13%)水平,显示出良好的循环稳定性。与纯NiS和Cu 7 S 4相比,空心Cu 7 S 4 / NiS复合材料的开发被证明可以有效地提高超电容性能。
更新日期:2017-09-25
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