Hollow cubic double layer structured Cu7S4/NiS nanocomposites for high-performance supercapacitors,Journal of Materials Chemistry A

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Hollow cubic double layer structured Cu7S4/NiS nanocomposites for high-performance supercapacitors
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2017-09-08 00:00:00 , DOI: 10.1039/c7ta05784a
Hongliang Cao _{1,

2,

3,

4,

5} , Xiang Wang _{1,

2,

3,

4,

5} , Xin Chen _{1,

2,

3,

4,

5} , Haiyang Liu _{1,

2,

3,

4,

5} , Junsheng Zheng _{6,

7,

8,

9,

10} , Wangfan Zhou _{1,

2,

3,

4,

5}

Affiliation

A double layer hollow structured Cu₇S₄/NiS material is synthesized using a self-generated sacrificial template method, as an electrode material for supercapacitors. Cu₇S₄/NiS composites with three different particle sizes are synthesized and tested, which exhibited high specific capacitances of 1204 F g⁻¹, 1028 F g⁻¹ and 857 F g⁻¹, respectively, at a current density of 1 A g⁻¹. The specific capacitance of the nanocomposites remained at 945.5 F g⁻¹ (85.8%), 719.2 F g⁻¹ (84.32%) and 558.5 F g⁻¹ (80.13%) levels after 1000 cycles, respectively, at a current density of 4 A g⁻¹, showing good cycle stability. Compared with the pure NiS and Cu₇S₄, the development of the hollow Cu₇S₄/NiS composites is demonstrated to be effective in enhancing the supercapacitive performance.

中文翻译：

中空立方双层结构化Cu ₇ S ₄ / NiS纳米复合材料，用于高性能超级电容器

使用自生牺牲模板法合成双层中空结构的Cu ₇ S ₄ / NiS材料，作为超级电容器的电极材料。铜₇小号₄ / NIS复合材料用三种不同颗粒尺寸合成和测试，这显示出1204 F G高的比电容^-1，1028 F G ^-1和857 F G ^-1，分别在1倍的电流密度g ^-1。纳米复合材料的比电容保持在945.5 F g ^-1（85.8％），719.2 F g ^-1（84.32％）和558.5 F g ^-1在电流密度为4 A g ^{-1的情况下}，分别经过1000次循环后（80.13％）水平，显示出良好的循环稳定性。与纯NiS和Cu ₇ S _4相比，空心Cu ₇ S ₄ / NiS复合材料的开发被证明可以有效地提高超电容性能。

更新日期：2017-09-25

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