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Enhanced optical nonlinearities in CMOS-compatible ultra-silicon-rich nitride photonic crystal waveguides
Applied Physics Letters ( IF 3.5 ) Pub Date : 2017-09-18 , DOI: 10.1063/1.5003816
E. Sahin 1, 2 , K. J. A. Ooi 1 , G. F. R. Chen 1 , D. K. T. Ng 3 , C. E. Png 2 , D. T. H. Tan 1
Affiliation  

We present the design, fabrication, and characterization of photonic crystal waveguides (PhCWs) on an ultra-silicon-rich nitride (USRN) platform, with the goal of augmenting the optical nonlinearities. The design goals are to achieve an optimized group index curve on the PhCW band edge with a non-membrane PhCW with symmetric SiO2 undercladding and overcladding, so as to maintain back-end CMOS compatibility and better structural robustness. Linear optical characterization, as well as nonlinear optical characterization of PhCWs on ultra-silicon-rich nitride is performed at the telecommunication wavelengths. USRN's negligible two-photon absorption and free carrier losses at the telecommunication wavelengths ensure that there is no scaling of two-photon related losses with the group index, thus maintaining a high nonlinear efficiency. Self-phase modulation experiments are performed using a 96.6 μm PhCW. A 1.5π phase shift is achieved with an input peak power of 2.5 W implying an effective nonlinear parameter ...

中文翻译:

CMOS兼容的超富硅氮化物光子晶体波导中增强的光学非线性

我们在超富硅氮化物 (USRN) 平台上展示了​​光子晶体波导 (PhCW) 的设计、制造和表征,目的是增强光学非线性。设计目标是在 PhCW 带边缘实现优化的群指数曲线,采用具有对称 SiO2 下包层和上包层的非膜 PhCW,以保持后端 CMOS 兼容性和更好的结构稳健性。PhCW 在超富硅氮化物上的线性光学表征以及非线性光学表征是在电信波长下进行的。USRN 在电信波长上可忽略的双光子吸收和自由载流子损耗确保没有与群指数有关的双光子相关损耗的缩放,从而保持高非线性效率。自相位调制实验使用 96.6 μm PhCW 进行。1.5π 相移是通过 2.5 W 的输入峰值功率实现的,这意味着有效的非线性参数......
更新日期:2017-09-18
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