An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-Perot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promis...

中文翻译：

---

可调谐 InGaN 量子点微腔发光器，具有 129 nm 调谐范围，从黄绿色到紫色

展示了具有 129 nm 大调谐范围的基于电泵浦波长可调 InGaN 量子点 (QD) 的微腔 (MC) 打火机发射器。通过从 564 nm（黄绿色）到 435 nm（紫色）的注入电流来调整多模发射光谱。MC 光发射器具有双电介质分布式布拉格反射器结构和使用基板转移和激光剥离技术制造的铜基板。通过利用具有可调宽发射光谱的 InGaN QD 有源层和允许多纵向模式谐振的 Fabry-Perot 腔，发射光谱可以在几个特定的​​腔模式之间进行调整，这些模式由增益增强因子决定。此外，在单个 MC 器件中观察到由增益增强因子引起的 MC 发射模式的增强和抑制。作为第一个基于电驱动 III-V 族氮化物半导体的可调谐 MC 光发射器，调谐范围为 129 nm，该器件有望...