Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a B0.14Al0.86 N/Al0.7Ga0.3N heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p3/2 with respect to the valence band maximum of B0.14Al0.86N and Al0.7Ga0.3N layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p3/2 core levels at the interface of the hetero...

中文翻译：

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B0.14Al0.86N/Al0.7Ga0.3N异质结的能带排列

由于 BAlN 和 AlGaN 合金的大带隙，它们的异质结有可能用于深紫外和电力电子器件应用。然而，这种结的能带排列尚未确定。在这项工作中，我们研究了通过金属有机气相外延生长的 B0.14Al0.86 N/Al0.7Ga0.3N 异质结的带偏移参数。选择这些特定的成分是为了确保为深紫外和电力电子应用提供足够大的带偏移。高分辨率透射电子显微镜证实了具有突变界面和均匀元素分布的异质结的高结构质量。我们采用高分辨率 X 射线光电子能谱来测量 B 1s 和 Ga 2p3/2 相对于 B0 的价带最大值的核心能级结合能。分别为 14Al0.86N 和 Al0.7Ga0.3N 层。然后，我们测量了异质层界面处 B 1s 和 Ga 2p3/2 核心能级之间的能量分离。