We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm−2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

中文翻译：

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轴上 (001) GaP/Si 上的高效低阈值电流 1.3 μm InAs 量子点激光器

我们展示了使用分子束外延在轴上 (001) GaP/Si 衬底上外延生长的高效、低阈值 InAs 量子点激光器。电子通道对比成像测量显示，在 GaP/Si 上生长的优化 GaAs 模板的穿透位错密度为 7.3 × 106 cm-2。高质量的 GaAs 模板使解理量子点激光器能够实现 9.5 mA 的室温连续波 (CW) 阈值电流，阈值电流密度低至 132 A/cm2，单侧输出功率为175 mW，室温下壁插效率为 38.4%。解理 QD 激光器显示基态 CW 激光高达 80 °C。在一个激光面上应用 95% 的高反射率涂层会产生 6.7 mA 的 CW 阈值电流，这是在硅上生长的任何类型的法布里-珀罗激光器的创纪录低值。