The detailed crystal structure and antiferromagnetic properties of a 42 nm thick CaMnO3 film grown on a LaAlO3 substrate with a 9 nm La0.67Ca0.33MnO3 buffer layer have been investigated. Compared with a CaMnO3 film directly grown on a LaAlO3 substrate, only one kind of orthorhombic b axis orientation along the [100] axis of the substrate is observed in the CaMnO3 film with a La0.67Ca0.33MnO3 buffer layer. To determine the antiferromagnetic ordering type of our CaMnO3 film with a buffer layer, the first-principles calculations were carried out with the results, indicating that the CaMnO3 film, even under a tensile strain of 1.9%, is still a compensated G-type antiferromagnetic order, the same as the bulk. Moreover, the exchange bias effect is observed at the interface of the CaMnO3/La0.67Ca0.33MnO3 film, further confirming the antiferromagnetic ordering of the CaMnO3 film with a buffer layer. In addition, it is concluded that the exchange bias effect originates from the spin glass state at the La0.67Ca0.33...

中文翻译：

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具有 La0.67Ca0.33MnO3 缓冲层的多铁性 CaMnO3 薄膜中的单正交 b 轴取向和反铁磁有序类型

已经研究了在具有 9 nm La0.67Ca0.33MnO3 缓冲层的 LaAlO3 衬底上生长的 42 nm 厚 CaMnO3 膜的详细晶体结构和反铁磁性能。与直接生长在 LaAlO3 衬底上的 CaMnO3 薄膜相比，在具有 La0.67Ca0.33MnO3 缓冲层的 CaMnO3 薄膜中仅观察到一种沿衬底 [100] 轴的正交 b 轴取向。为了确定我们带有缓冲层的 CaMnO3 薄膜的反铁磁有序类型，对结果进行了第一性原理计算，表明 CaMnO3 薄膜即使在 1.9% 的拉伸应变下仍然是补偿的 G 型反铁磁订单，与批量相同。此外，在 CaMnO3/La0.67Ca0.33MnO3 薄膜的界面处观察到交换偏置效应，进一步证实了具有缓冲层的 CaMnO3 薄膜的反铁磁有序性。此外，得出的结论是，交换偏置效应源于 La0.67Ca0.33...