Accurate lifetime predictions for Pb(Zr0.52Ti0.48)O3 thin films are critical for a number of applications, but current reliability models are not consistent with the resistance degradation mechanisms in lead zirconate titanate. In this work, the reliability and lifetime of chemical solution deposited (CSD) and sputtered Pb(Zr0.52Ti0.48)O3 thin films are characterized using highly accelerated lifetime testing (HALT) and leakage current-voltage (I-V) measurements. Temperature dependent HALT results and impedance spectroscopy show activation energies of approximately 1.2 eV for the CSD films and 0.6 eV for the sputtered films. The voltage dependent HALT results are consistent with previous reports, but do not clearly indicate what causes device failure. To understand more about the underlying physical mechanisms leading to degradation, the I-V data are fit to known conduction mechanisms, with Schottky emission having the best-fit and realistic extracted material parameters. Using the Schottky emission equati...

中文翻译：

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基于物理的锆钛酸铅薄膜直流寿命模型

Pb(Zr0.52Ti0.48)O3 薄膜的准确寿命预测对于许多应用至关重要，但当前的可靠性模型与锆钛酸铅的电阻退化机制不一致。在这项工作中，化学溶液沉积 (CSD) 和溅射 Pb(Zr0.52Ti0.48)O3 薄膜的可靠性和寿命使用高度加速寿命测试 (HALT) 和漏电流电压 (IV) 测量进行表征。温度相关的 HALT 结果和阻抗谱显示 CSD 薄膜的活化能约为 1.2 eV，溅射薄膜的活化能约为 0.6 eV。电压相关的 HALT 结果与之前的报告一致，但没有明确指出导致设备故障的原因。为了更多地了解导致退化的潜在物理机制，IV 数据适合已知的传导机制，肖特基发射具有最佳拟合和实际提取的材料参数。使用肖特基发射方程...