Mesoporous Semimetallic Conductors: Structural and Electronic Properties of Cobalt Phosphide Systems,Angewandte Chemie International Edition

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Mesoporous Semimetallic Conductors: Structural and Electronic Properties of Cobalt Phosphide Systems
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2017-09-22 , DOI: 10.1002/anie.201707878
Malay Pramanik ₁ , Satoshi Tominaka ₁ , Zhong-Li Wang ₁ , Toshiaki Takei ₁ , Yusuke Yamauchi _{1,

2,

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Affiliation

Mesoporous cobalt phosphide (meso‐CoP) was prepared by the phosphorization of ordered mesoporous cobalt oxide (meso‐Co₃O₄). The electrical conductivity of meso‐CoP is 37 times higher than that of nonporous CoP, and it displays semimetallic behavior with a negligibly small activation energy of 26 meV at temperatures below 296 K. Above this temperature, only materials with mesopores underwent a change in conductivity from semimetallic to semiconducting behavior. These properties were attributed to the coexistence of nanocrystalline Co₂P phases. The poor crystallinity of mesoporous materials has often been considered to be a problem but this example clearly shows its positive aspects. The concept introduced here should thus lead to new routes for the synthesis of materials with high electronic conductivity.

中文翻译：

介孔半金属导体：磷化钴体系的结构和电子性能

中孔磷化钴（meso-CoP）是通过对有序中孔氧化钴（meso-Co ₃ O ₄）进行磷化而制备的。meso-CoP的电导率是无孔CoP的37倍，并且在低于296 K的温度下表现出半金属行为，活化能仅为26 meV，可以忽略不计。在此温度以上，只有具有中孔的材料发生了电导率变化从半金属到半导体的行为。这些性质归因于纳米晶Co ₂的共存P相。介孔材料结晶度差通常被认为是一个问题，但是这个例子清楚地表明了它的积极方面。因此，此处介绍的概念应为合成具有高电子电导率的材料开辟新途径。

更新日期：2017-09-22

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