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Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-09-21 00:00:00 , DOI: 10.1021/acsami.7b08961 Yan Zhou 1 , Julian Anaya 1 , James Pomeroy 1 , Huarui Sun 1 , Xing Gu 2 , Andy Xie 2 , Edward Beam 2 , Michael Becker 3 , Timothy A. Grotjohn 3, 4 , Cathy Lee 2 , Martin Kuball 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-09-21 00:00:00 , DOI: 10.1021/acsami.7b08961 Yan Zhou 1 , Julian Anaya 1 , James Pomeroy 1 , Huarui Sun 1 , Xing Gu 2 , Andy Xie 2 , Edward Beam 2 , Michael Becker 3 , Timothy A. Grotjohn 3, 4 , Cathy Lee 2 , Martin Kuball 1
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GaN-on-diamond device cooling can be enhanced by reducing the effective thermal boundary resistance (TBReff) of the GaN/diamond interface. The thermal properties of this interface and of the polycrystalline diamond grown onto GaN using SiN and AlN barrier layers as well as without any barrier layer under different growth conditions are investigated and systematically compared for the first time. TBReff values are correlated with transmission electron microscopy analysis, showing that the lowest reported TBReff (∼6.5 m2 K/GW) is obtained by using ultrathin SiN barrier layers with a smooth interface formed, whereas the direct growth of diamond onto GaN results in one to two orders of magnitude higher TBReff due to the formation of a rough interface. AlN barrier layers can produce a TBReff as low as SiN barrier layers in some cases; however, their TBReff are rather dependent on growth conditions. We also observe a decreasing diamond thermal resistance with increasing growth temperature.
中文翻译：
增强氮化镓金刚石器件冷却的势垒层优化
可以通过降低GaN /金刚石界面的有效热边界电阻（TBR eff）来增强GaN-on-Diamond器件的冷却。首次研究并系统地比较了该界面以及使用SiN和AlN阻挡层以及没有任何阻挡层在不同生长条件下生长到GaN上的多晶金刚石的热性能。TBR eff值与透射电子显微镜分析相关，表明使用形成光滑界面的超薄SiN势垒层可获得报道的最低TBR eff（约6.5 m 2 K / GW），而金刚石直接生长在GaN上TBR效率提高一到两个数量级由于形成了粗糙的界面。在某些情况下，AlN势垒层的TBR效率可低至SiN势垒层。然而，它们的TBR效率相当依赖于生长条件。我们还观察到随着生长温度的升高，金刚石的热阻降低。
更新日期：2017-09-21
中文翻译：
增强氮化镓金刚石器件冷却的势垒层优化
可以通过降低GaN /金刚石界面的有效热边界电阻（TBR eff）来增强GaN-on-Diamond器件的冷却。首次研究并系统地比较了该界面以及使用SiN和AlN阻挡层以及没有任何阻挡层在不同生长条件下生长到GaN上的多晶金刚石的热性能。TBR eff值与透射电子显微镜分析相关，表明使用形成光滑界面的超薄SiN势垒层可获得报道的最低TBR eff（约6.5 m 2 K / GW），而金刚石直接生长在GaN上TBR效率提高一到两个数量级由于形成了粗糙的界面。在某些情况下，AlN势垒层的TBR效率可低至SiN势垒层。然而，它们的TBR效率相当依赖于生长条件。我们还观察到随着生长温度的升高，金刚石的热阻降低。
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