Redox-based memristor devices, which are considered to have promising nonvolatile memory, mainly operate through the formation/rupture of nanoscale conductive filaments. However, the random growth of conductive filaments is an obstacle for the stability of memory devices and the cell-to-cell uniformity. Here, we investigate the guiding effect of nanoindentation on the growth of conductive filaments in resistive memory devices. The nanoindented top electrodes generate an electric field concentration and the resultant precise control of a conductive filament in two typical memory devices, Ag/SiO₂/Pt and W/Ta₂O₅/Pt. The nanoindented cells possess a much larger ON/OFF ratio, a sharper RESET process, a higher response speed, and better cell-to-cell uniformity compared with the conventional cells. Our finding reflects that the use of large-scale nanotransfer printing might be a unique way to improve the performance of resistive random access memory.

中文翻译：

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通过纳米压痕引导导电丝的生长以改善电阻开关

基于氧化还原的忆阻器器件被认为具有广阔的非易失性存储器，主要通过纳米级导电丝的形成/破坏来工作。然而，导电细丝的随机生长是存储装置的稳定性和单元至单元均匀性的障碍。在这里，我们研究了纳米压痕对电阻存储器件中导电细丝生长的指导作用。纳米压痕顶部电极产生电场集中，从而在两个典型的存储设备Ag / SiO ₂ / Pt和W / Ta ₂ O _5中精确控制导电丝。/点 与常规电池相比，纳米压痕电池具有更大的开/关比，更锐利的RESET过程，更高的响应速度以及更好的电池间均匀性。我们的发现反映出，大规模纳米转移印刷的使用可能是提高电阻式随机存取存储器性能的独特方法。