The usability and tunability of the essential InP–InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP–InGaAs–InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP–InGaAs direct interface is found to be sharp while the InGaAs–InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3–1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP–InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.

中文翻译：

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InP–In _x Ga ₁ - _x As核-多壳纳米线量子阱，在1.3–1.55μm波长范围内具有可调发射

评估了基于纳米线的量子阱（QW）中基本InP-InGaAs材料组合的可用性和可调谐性。纤锌矿相核-多壳InP-InGaAs-InP纳米线量子阱的特征在于截面透射电子显微镜和光致发光测量。发现InP-InGaAs直接界面较锐利，而InGaAs-InP倒置界面则更加平坦，与其平面对应物一致。在室温下，从包含QW的单根纳米线观察到明亮的发射，而InP核心或外部势垒没有发射。通过改变QW厚度和在1.3μm范围内改变组成，可以证明在1.3–1.55μm通讯波长范围内QW发射波长的可调性。在所考虑的厚度范围内，通过纤锌矿相InP–InGaAs QW的发射波长的仿真，为实验提供了支持。径向异质结构进一步扩展以设计具有明亮发射的多个QW，因此确立了该材料系统用于通信应用中基于纳米线的光学器件的能力。