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High magnetic relaxivity in a fluorescent CdSe/CdS/ZnS quantum dot functionalized with MRI contrast molecules
Chemical Communications ( IF 4.3 ) Pub Date : 2017-08-22 00:00:00 , DOI: 10.1039/c7cc05537d
S. G. McAdams 1, 2, 3 , D. J. Lewis 1, 2, 2, 3, 4 , P. D. McNaughter 1, 2, 3 , E. A. Lewis 2, 3, 4 , S. J. Haigh 2, 3, 4 , P. O’Brien 1, 2, 2, 3, 4 , F. Tuna 1, 2, 2, 3, 5
Affiliation  

Light emitting semiconducting quantum dots show great promise as solar cells, optoelectronic devices and multimodal imaging probes. Here we demonstrate successful grafting of a thiol-functionalised GdIII MRI contrast agent onto the surface of core-multishell CdSe/CdS/ZnS quantum dots. The resulting nanoprobe exhibits intense photoluminescence and unprecedentedly large T1 relaxivity of 6800 mM−1 s−1 per nanoparticle due to secure implanting of ca. 620 magnetic centers per quantum dot unit.

中文翻译:

MRI对比分子功能化的荧光CdSe / CdS / ZnS量子点中的高磁弛豫

发光半导体量子点作为太阳能电池,光电器件和多峰成像探针具有广阔的前景。在这里,我们证明了巯基官能化的Gd III MRI造影剂成功接枝到核-多壳CdSe / CdS / ZnS量子点的表面上。所得到的纳米探针由于牢固地注入了200nm的碳,因此表现出强烈的光致发光和每纳米粒子6800 mM -1 s -1的前所未有的大T 1弛豫每个量子点单位620个磁性中心。
更新日期:2017-09-21
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