Abstract We investigated the diffusion characteristics of Zn in ternary and quaternary alloys of InGaAsP and InGaAlAs, which are important materials in long-wavelength optical communication devices. The measured Zn diffusion profiles of InGaAs, InGaAsP, and InGaAlAs showed kink-and-tail shapes in which Zn concentration fell abruptly at first and then decreased slowly, whereas those of InP and InAlAs showed only abrupt decreases. Thus, only Ga-containing alloys had tail-like profiles. Since this tail was well described by the group-V vacancy related defect model, we deduced that its mechanism is closely related with group-V vacancies in Ga-related bonds such as GaP or GaAs. Furthermore, we demonstrated the possibility that many more group-V vacancies originated from GaP bonds than from GaAs bonds, indicating the difficulty in crystal growth of high quality alloys that have GaP components.

中文翻译：

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在 MOVPE 再生长过程中 InGaAsP 和 InGaAlAs 合金中 Ga 起源的扭结和尾部 Zn 扩散分布

摘要 我们研究了 Zn 在 InGaAsP 和 InGaAlAs 三元和四元合金中的扩散特性，这些合金是长波长光通信器件的重要材料。测得的 InGaAs、InGaAsP 和 InGaAlAs 的 Zn 扩散曲线呈现扭结和尾部形状，其中 Zn 浓度先急剧下降，然后缓慢下降，而 InP 和 InAlAs 的扩散曲线仅表现出急剧下降。因此，只有含 Ga 合金具有尾状轮廓。由于该尾部由 V 族空位相关缺陷模型很好地描述，我们推断其机制与 Ga 相关键（如 GaP 或 GaAs）中的 V 族空位密切相关。此外，我们证明了来自 GaP 键的 V 族空位比来自 GaAs 键更多的可能性，