Abstract Graphite/a-Si/Al laminated structures were deposited on graphite substrate using magnetron sputtering technology. The substrate temperature of amorphous silicon (a-Si) deposition and the Al/Si thickness ratio have strong influences on a-Si crystallization, various conditions were used to investigate the polycrystalline silicon (poly-Si) thin films grown by inverted aluminum-induced crystallization (AIC) for process optimization. In this paper, we established the AIC model to explain the effects of the two factors in the inverted AIC process. The poly-Si thin films were characterized By means of Scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (Raman), which showed that the samples with strong preferred (1 1 1) orientation and high crystallization quality that were favorable for epitaxially growing poly-Si thick film cells.

中文翻译：

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在石墨基板上通过倒 AIC 工艺制备多晶硅薄膜

摘要 使用磁控溅射技术在石墨基底上沉积石墨/a-Si/Al 层状结构。非晶硅 (a-Si) 沉积的衬底温度和 Al/Si 厚度比对 a-Si 结晶有很大影响, 使用各种条件研究了倒置铝诱导生长的多晶硅 (poly-Si) 薄膜。用于工艺优化的结晶 (AIC)。在本文中，我们建立了 AIC 模型来解释两个因素在逆 AIC 过程中的影响。通过扫描电子显微镜（SEM）、X射线衍射（XRD）和拉曼光谱（Raman）对多晶硅薄膜进行表征，