Abstract A polycrystalline AlN underlayer prepared by reactive sputtering has been used for the preparation of SmCo 3.5 Cu 0.5 thin films with varying thickness. The out-of-plane (OOP) texture is confirmed by X-ray diffraction and magnetic measurements. A highest ambient coercivity of 2.92 T is obtained with good squareness. The microstructure shows columnar grains and a high density of stacking faults. Additionally, a twinning structure is found. The thermal stability of the coercivity of AlN-buffered SmCo 3.5 Cu 0.5 thin films has been investigated in correlation with the microstructure. The present work demonstrates the great potential of using AlN underlayer for the preparation high-performance Sm-(Co,Cu) thin films with OOP texture.

中文翻译：

---

在具有垂直各向异性的多晶 AlN 缓冲 Cu 掺杂 Sm-Co 薄膜中实现高矫顽力和矩形度

摘要 通过反应溅射制备的多晶AlN底层已用于制备不同厚度的SmCo 3.5 Cu 0.5 薄膜。X 射线衍射和磁测量证实了平面外 (OOP) 纹理。获得了 2.92 T 的最高环境矫顽力，并具有良好的矩形度。显微组织显示柱状晶粒和高密度的堆垛层错。此外，还发现了孪生结构。已经研究了 AlN 缓冲的 SmCo 3.5 Cu 0.5 薄膜矫顽力的热稳定性与微观结构的相关性。目前的工作证明了使用 AlN 底层制备具有 OOP 纹理的高性能 Sm-(Co,Cu) 薄膜的巨大潜力。