Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate the complex processing of semiconductor devices. In this review, some of the main processes used for semiconductor industries to manufacture transistor from semiconductor materials, namely implantation, annealing and epitaxial growth are reviewed. The evolution of defects created during such processing for the particular, and well known case, of silicon, is commented. Kinetic Monte Carlo modeling is introduced and contrasted briefly with a continuum approach. Particular models of different phenomena, using both object and lattice KMC, are shown: point defect migration, cluster formation, dopant activation and deactivation, damage accumulation, amorphization, recrystallization, solid phase and selective epitaxial regrowth, etc. In this work we describe the models, its implementation into KMC, and we show several comparisons with significant experimental data validating the KMC approach and showing its capabilities. How extra capabilities can be included by extending the models to current problems in the semiconductor industry is also commented, in particular the use of SiGe alloys and the introduction of stress dependencies.

中文翻译：

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用于半导体加工的动力学蒙特卡罗模拟：综述

摘要 动力学蒙特卡罗 (KMC) 算法是一种特别适合模拟半导体器件复杂加工的技术。在这篇综述中，回顾了半导体行业使用半导体材料制造晶体管的一些主要工艺，即注入、退火和外延生长。评论了在这种处理过程中针对特定的、众所周知的硅情况产生的缺陷的演变。介绍了动力学蒙特卡罗建模，并与连续方法进行了简要对​​比。显示了使用物体和晶格 KMC 的不同现象的特定模型：点缺陷迁移、簇形成、掺杂剂激活和失活、损伤积累、非晶化、再结晶、固相和选择性外延再生长等。在这项工作中，我们描述了模型及其在 KMC 中的实现，并展示了与验证 KMC 方法并展示其功能的重要实验数据的几个比较。还评论了如何通过将模型扩展到半导体行业中的当前问题来包含额外的功能，特别是 SiGe 合金的使用和应力依赖性的引入。