Abstract Oxygen plasma interaction with graphene is a prime route to functionalizing for unique semiconducting and photoluminescent properties. Unlike exfoliated graphene films, chemical vapour deposited (CVD) graphene on metal show much longer and more robust response to oxygen plasma. In this study, we use Raman, ATR-FTIR and x-ray photoelectron spectroscopy to examine the behaviour of full coverage CVD graphene on Cu under various plasma and annealing treatments. Initially exposure to oxygen plasma leads to light oxygen doping, analogous to reduced graphene oxide (phase I GO). With increasing oxygen exposure, the Cu underneath the defect sites begin to oxidize, stabilizing the graphene layer. Eventually, the reduced graphene oxide undergoes a transformation into a graphene oxide-like reduced graphene oxide (phase II GO), accompanied by the complete oxidation of the Cu foil underneath. The synergistic effect of Cu and graphene oxidation by oxygen plasma means that both are stabilized, with the graphene acting as an oxygen barrier for Cu at the initial stages and the Cu preventing complete graphene destruction until significant plasma dosages are reached. The longer window of plasma induced damage due to this synergistic oxidation mechanism may be exploited to pattern nanostructures in graphene based devices.

中文翻译：

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通过氧等离子体蚀刻在Cu上协同氧化CVD石墨烯

摘要 氧等离子体与石墨烯的相互作用是实现独特半导体和光致发光特性功能化的主要途径。与剥离的石墨烯薄膜不同，金属上的化学气相沉积 (CVD) 石墨烯对氧等离子体表现出更长、更稳健的响应。在这项研究中，我们使用拉曼、ATR-FTIR 和 X 射线光电子能谱来检查在各种等离子体和退火处理下全覆盖 CVD 石墨烯在 Cu 上的行为。最初暴露于氧等离子体会导致轻氧掺杂，类似于还原氧化石墨烯（I 相 GO）。随着氧暴露的增加，缺陷位点下方的铜开始氧化，稳定石墨烯层。最终，还原的氧化石墨烯转变为类似氧化石墨烯的还原氧化石墨烯（II 相 GO），伴随着下面的铜箔的完全氧化。Cu 和氧等离子体氧化石墨烯的协同效应意味着两者都是稳定的，石墨烯在初始阶段充当 Cu 的氧屏障，而 Cu 防止石墨烯完全破坏，直到达到显着的等离子体剂量。由于这种协同氧化机制，等离子体诱导损伤的较长窗口可用于在基于石墨烯的器件中图案化纳米结构。