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Determination of the True Lateral Grain Size in Organic–Inorganic Halide Perovskite Thin Films
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-09-21 00:00:00 , DOI: 10.1021/acsami.7b11434 Gordon A. MacDonald 1 , Chelsea M. Heveran , Mengjin Yang 2 , David Moore 2 , Kai Zhu 2 , Virginia L. Ferguson , Jason P. Killgore 1 , Frank W. DelRio 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-09-21 00:00:00 , DOI: 10.1021/acsami.7b11434 Gordon A. MacDonald 1 , Chelsea M. Heveran , Mengjin Yang 2 , David Moore 2 , Kai Zhu 2 , Virginia L. Ferguson , Jason P. Killgore 1 , Frank W. DelRio 1
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In this letter, methylammonium lead iodide (MAPbI3) thin films were examined via piezoresponse force microscopy (PFM) and nanoindentation (NI) to determine if long-range atomic order existed across the full width and depth of the apparent grains. From the PFM, the piezoelectric response of the films was strongly correlated with low-index planes of the crystal structure and ferroelastic domains in macroscale solution-grown MAPbI3 crystals, which implied long-range order near the top surface. From the NI, it was found that the induced cracks were straight and extended across the full width of the apparent grains, which indicated that the long-range order was not limited to the near-surface region, but extended through the film thickness. Interestingly, the two MAPbI3 processes examined resulted in subtle differences in the extracted electro-mechanical and fracture properties, but exhibited similar power conversion efficiencies of >17% in completed devices.
中文翻译：
有机-无机卤化物钙钛矿薄膜中真实横向晶粒尺寸的确定
在这封信中，通过压电响应力显微镜（PFM）和纳米压痕（NI）检查了甲基铵碘化铅（MAPbI 3）薄膜，以确定在表观晶粒的整个宽度和深度上是否存在长距离原子序。从PFM来看，薄膜的压电响应与宏观溶液生长的MAPbI 3晶体的低折射率平面晶体结构和铁弹性域密切相关，这暗示着顶表面附近的长程有序。从NI中发现，诱发的裂纹是笔直的，并且在表观晶粒的整个宽度上延伸，这表明长程有序不限于近表面区域，而是延伸到整个膜厚度。有趣的是，两个MAPbI 3 所检查的过程导致所提取的机电性能和断裂性能之间存在细微差异，但在完整的设备中表现出相似的功率转换效率，> 17％。
更新日期：2017-09-21
中文翻译：
有机-无机卤化物钙钛矿薄膜中真实横向晶粒尺寸的确定
在这封信中，通过压电响应力显微镜（PFM）和纳米压痕（NI）检查了甲基铵碘化铅（MAPbI 3）薄膜，以确定在表观晶粒的整个宽度和深度上是否存在长距离原子序。从PFM来看，薄膜的压电响应与宏观溶液生长的MAPbI 3晶体的低折射率平面晶体结构和铁弹性域密切相关，这暗示着顶表面附近的长程有序。从NI中发现，诱发的裂纹是笔直的，并且在表观晶粒的整个宽度上延伸，这表明长程有序不限于近表面区域，而是延伸到整个膜厚度。有趣的是，两个MAPbI 3 所检查的过程导致所提取的机电性能和断裂性能之间存在细微差异，但在完整的设备中表现出相似的功率转换效率，> 17％。
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