当前位置：
X-MOL 学术
›
ACS Appl. Mater. Interfaces
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Hybrid WSe2–In2O3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-09-20 00:00:00 , DOI: 10.1021/acsami.7b10698 Nan Guo 1 , Fan Gong 2, 3 , Junku Liu 1 , Yi Jia 1 , Shaofan Zhao 1 , Lei Liao 3 , Meng Su 3 , Zhiyong Fan 4 , Xiaoshuang Chen 2 , Wei Lu 2 , Lin Xiao 1 , Weida Hu 2
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-09-20 00:00:00 , DOI: 10.1021/acsami.7b10698 Nan Guo 1 , Fan Gong 2, 3 , Junku Liu 1 , Yi Jia 1 , Shaofan Zhao 1 , Lei Liao 3 , Meng Su 3 , Zhiyong Fan 4 , Xiaoshuang Chen 2 , Wei Lu 2 , Lin Xiao 1 , Weida Hu 2
Affiliation
|
Photodetectors based on low-dimensional materials have attracted tremendous attention because of their high sensitivity and compatibility with conventional semiconductor technology. However, up until now, developing low-dimensional phototransistors with high responsivity and low dark currents over broad-band spectra still remains a great challenge because of the trade-offs in the potential architectures. In this work, we report a hybrid phototransistor consisting of a single In2O3 nanowire as the channel material and a multilayer WSe2 nanosheet as the decorating sensitizer for photodetection. Our devices show high responsivities of 7.5 × 105 and 3.5 × 104 A W–1 and ultrahigh detectivities of 4.17 × 1017 and 1.95 × 1016 jones at the wavelengths of 637 and 940 nm, respectively. The superior detectivity of the hybrid architecture arises from the extremely low dark currents and the enhanced photogating effect in the depletion regime by the unique design of energy band alignment of the channel and sensitizer materials. Moreover, the visible to near-infrared absorption properties of the multilayer WSe2 nanosheet favor a broad-band spectral response for the devices. Our results pave the way for developing ultrahigh-sensitivity photodetectors based on low-dimensional hybrid architectures.
中文翻译：
通过有效抑制暗电流实现具有超高检测率的混合型WSe 2 -In 2 O 3光电晶体管
基于低维材料的光电探测器由于其高灵敏度和与常规半导体技术的兼容性而备受关注。然而，到目前为止，由于在潜在架构中需要进行权衡，因此开发具有高响应度和低暗电流的宽带低光谱光电晶体管仍然是一项巨大的挑战。在这项工作中，我们报告了一种混合型光电晶体管，该晶体管由一条In 2 O 3纳米线作为通道材料，多层WSe 2纳米片作为用于光检测的装饰敏化剂。我们的设备显示出7.5×10 5和3.5×10 4 AW –1的高响应度分别在637和940 nm波长处的超高探测灵敏度分别为4.17×10 17和1.95×10 16琼斯。通过通道和敏化剂材料能带对准的独特设计，混合体系结构的出色检测能力来自极低的暗电流和耗尽状态下增强的光门效应。此外，多层WSe 2纳米片的可见到近红外吸收特性有利于器件的宽带光谱响应。我们的结果为开发基于低维混合体系结构的超高灵敏度光电探测器铺平了道路。
更新日期：2017-09-20
中文翻译：
通过有效抑制暗电流实现具有超高检测率的混合型WSe 2 -In 2 O 3光电晶体管
基于低维材料的光电探测器由于其高灵敏度和与常规半导体技术的兼容性而备受关注。然而，到目前为止，由于在潜在架构中需要进行权衡，因此开发具有高响应度和低暗电流的宽带低光谱光电晶体管仍然是一项巨大的挑战。在这项工作中，我们报告了一种混合型光电晶体管，该晶体管由一条In 2 O 3纳米线作为通道材料，多层WSe 2纳米片作为用于光检测的装饰敏化剂。我们的设备显示出7.5×10 5和3.5×10 4 AW –1的高响应度分别在637和940 nm波长处的超高探测灵敏度分别为4.17×10 17和1.95×10 16琼斯。通过通道和敏化剂材料能带对准的独特设计，混合体系结构的出色检测能力来自极低的暗电流和耗尽状态下增强的光门效应。此外，多层WSe 2纳米片的可见到近红外吸收特性有利于器件的宽带光谱响应。我们的结果为开发基于低维混合体系结构的超高灵敏度光电探测器铺平了道路。
京公网安备 11010802027423号