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Field-Effect Transistors Based on van-der-Waals-Grown and Dry-Transferred All-Inorganic Perovskite Ultrathin Platelets
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2017-09-20 00:00:00 , DOI: 10.1021/acs.jpclett.7b02028 Chengxue Huo 1 , Xuhai Liu 1 , Xiufeng Song 1 , Ziming Wang 1 , Haibo Zeng 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2017-09-20 00:00:00 , DOI: 10.1021/acs.jpclett.7b02028 Chengxue Huo 1 , Xuhai Liu 1 , Xiufeng Song 1 , Ziming Wang 1 , Haibo Zeng 1
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Nowadays, the research on perovskite transistors is still in its infancy, despite the fact that perovskite-based solar cells and light-emitting diodes have been widely investigated. Two major hurdles exist before obtaining reliable perovskite-based transistors: the processing difficulty for their sensitivity to polar solvents and unsatisfactory perovskite quality on the transistor platform. Here, for the first time, we report on high-performance all-inorganic perovskite FETs profiting from both van der Waals epitaxial boundary-free ultrathin single crystals and completely dry-processed transfer technique without chemical contaminant. These two crucial factors ensure the unprecedented high-quality perovskite channels. The achieved FET hole mobility and on–off ratio reach 0.32 cm2 V–1 s–1 and 6.7 × 103, respectively. Moreover, at the low temperature, the mobility and on–off ratio can be enhanced to be 1.04 cm2 V–1 s–1 and 1.3 × 104. This work could open the door for the FET applications based on perovskite single crystals.
中文翻译：
基于van-der-Waals-Grown和干转移全无机钙钛矿超薄血小板的场效应晶体管
如今，尽管对钙钛矿基太阳能电池和发光二极管进行了广泛研究，但对钙钛矿晶体管的研究仍处于起步阶段。在获得可靠的基于钙钛矿的晶体管之前，存在两个主要障碍：其对极性溶剂的敏感性和晶体管平台上钙钛矿质量的令人满意的加工难度。在这里，我们首次报道了高性能的全无机钙钛矿FET，它们都受益于范德华（Van der Waals）外延无边界超薄单晶和完全干法转移的技术，而没有化学污染物。这两个关键因素确保了前所未有的高质量钙钛矿通道。所获得的FET空穴迁移率和通断比达到0.32 cm 2 V –1 s分别为–1和6.7×10 3。此外，在低温下，迁移率和开关比可以提高到1.04 cm 2 V –1 s –1和1.3×10 4。这项工作可以为基于钙钛矿单晶的FET应用打开大门。
更新日期：2017-09-20
中文翻译：
基于van-der-Waals-Grown和干转移全无机钙钛矿超薄血小板的场效应晶体管
如今，尽管对钙钛矿基太阳能电池和发光二极管进行了广泛研究，但对钙钛矿晶体管的研究仍处于起步阶段。在获得可靠的基于钙钛矿的晶体管之前，存在两个主要障碍：其对极性溶剂的敏感性和晶体管平台上钙钛矿质量的令人满意的加工难度。在这里，我们首次报道了高性能的全无机钙钛矿FET，它们都受益于范德华（Van der Waals）外延无边界超薄单晶和完全干法转移的技术，而没有化学污染物。这两个关键因素确保了前所未有的高质量钙钛矿通道。所获得的FET空穴迁移率和通断比达到0.32 cm 2 V –1 s分别为–1和6.7×10 3。此外，在低温下，迁移率和开关比可以提高到1.04 cm 2 V –1 s –1和1.3×10 4。这项工作可以为基于钙钛矿单晶的FET应用打开大门。
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