Abstract The demand for high-purity semiconducting single-walled carbon nanotubes (sc-SWNTs) has increased considerably with the aim of utilizing their superior properties in a range of future applications. Among post-sorting methods, conjugated polymers have been regarded as one of the candidates to selectively isolate sc-SWNTs with uniform electrical properties. Herein, we demonstrate the ability to selectively sort two types of SWNTs by the two polymers PCTV18T and PC12TV18T, which have different alkyl side-chain densities. PC12TV18T, with a high alkyl chain density, shows great sorting ability for both high-pressure carbon monoxide and plasma-torch-grown SWNTs with a weight ratio of almost 1:1 in toluene solution. In addition, it is found that PC12TV18T selectively sorts sc-SWNTs with the high purity. The chirality and diameters of the enriched sc-SWNTs are further confirmed by Raman spectroscopy and photoluminescence excitation/emission mapping. Finally, we fabricate bottom gate/bottom contact thin-film transistors using the enriched sc-SWNTs as semiconductors to verify the electrical performance. Devices with well-percolated sc-SWNT networks displayed p -dominant properties with average charge-carrier mobilities of 2.05 cm 2 V −1 S −1 and 9.87 cm 2 V −1 S −1 and on/off current ratios of approximately 10 4 and 10 5 for high-pressure carbon monoxide and plasma-torch-grown SWNTs, respectively.

中文翻译：

---

使用具有高烷基侧链密度的噻吩乙烯撑基共轭聚合物选择性分选半导体单壁碳纳米管

摘要 对高纯度半导体单壁碳纳米管 (sc-SWNT) 的需求已大大增加，目的是在未来的一系列应用中利用其优越的性能。在后分选方法中，共轭聚合物被认为是选择性分离具有均匀电性能的单壁碳纳米管的候选方法之一。在此，我们展示了通过具有不同烷基侧链密度的两种聚合物 PCTV18T 和 PC12TV18T 选择性分选两种类型的单壁碳纳米管的能力。PC12TV18T 具有高烷基链密度，对高压一氧化碳和等离子炬生长的单壁碳纳米管在甲苯溶液中的重量比几乎为 1:1，显示出良好的分选能力。此外，发现PC12TV18T选择性地分选高纯度的sc-SWNT。拉曼光谱和光致发光激发/发射映射进一步证实了富集的 sc-SWNT 的手性和直径。最后，我们使用富集的 sc-SWNT 作为半导体制造底栅/底接触薄膜晶体管，以验证电气性能。具有良好渗透的 sc-SWNT 网络的器件显示出 p 主导特性，平均电荷载流子迁移率为 2.05 cm 2 V -1 S -1 和 9.87 cm 2 V -1 S -1 并且开/关电流比约为 10 4和 10 5 分别用于高压一氧化碳和等离子炬生长的 SWNT。我们使用富集的单壁碳纳米管作为半导体制造底栅/底接触薄膜晶体管，以验证电气性能。具有良好渗透的 sc-SWNT 网络的器件显示出 p 主导特性，平均电荷载流子迁移率为 2.05 cm 2 V -1 S -1 和 9.87 cm 2 V -1 S -1 并且开/关电流比约为 10 4和 10 5 分别用于高压一氧化碳和等离子炬生长的 SWNT。我们使用富集的单壁碳纳米管作为半导体制造底栅/底接触薄膜晶体管，以验证电气性能。具有良好渗透的 sc-SWNT 网络的器件显示出 p 主导特性，平均电荷载流子迁移率为 2.05 cm 2 V -1 S -1 和 9.87 cm 2 V -1 S -1 并且开/关电流比约为 10 4和 10 5 分别用于高压一氧化碳和等离子炬生长的 SWNT。