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Three-fold Symmetric Doping Mechanism in GaAs Nanowires
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-20 00:00:00 , DOI: 10.1021/acs.nanolett.7b00794 M. H. T. Dastjerdi 1 , E. M. Fiordaliso 2 , E. D. Leshchenko 3 , A. Akhtari-Zavareh 1 , T. Kasama 2 , M. Aagesen 4, 5 , V. G. Dubrovskii 3, 6, 7 , R. R. LaPierre 1, 3
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-20 00:00:00 , DOI: 10.1021/acs.nanolett.7b00794 M. H. T. Dastjerdi 1 , E. M. Fiordaliso 2 , E. D. Leshchenko 3 , A. Akhtari-Zavareh 1 , T. Kasama 2 , M. Aagesen 4, 5 , V. G. Dubrovskii 3, 6, 7 , R. R. LaPierre 1, 3
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A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.
中文翻译：
GaAs纳米线的三重对称掺杂机理
报道了通过分子束外延生长的Ga辅助的GaAs纳米线中新的掺杂剂掺入机制。离轴电子全息图显示，在纳米线分子束外延生长期间原位引入的p型Be掺杂物在垂直于生长方向的纳米线横截面中不均匀分布。活性掺杂物沿纳米线的（111）B平顶显示出显着的方位角分布，这归因于在Ga小滴下沿3对称对称截断面的优选掺入。提出了一种扩散模型来解释GaAs纳米线中活性掺杂物的独特径向和方位变化。
更新日期：2017-09-20
中文翻译：
GaAs纳米线的三重对称掺杂机理
报道了通过分子束外延生长的Ga辅助的GaAs纳米线中新的掺杂剂掺入机制。离轴电子全息图显示，在纳米线分子束外延生长期间原位引入的p型Be掺杂物在垂直于生长方向的纳米线横截面中不均匀分布。活性掺杂物沿纳米线的（111）B平顶显示出显着的方位角分布，这归因于在Ga小滴下沿3对称对称截断面的优选掺入。提出了一种扩散模型来解释GaAs纳米线中活性掺杂物的独特径向和方位变化。
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