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Low-Temperature Steam Annealing of Metal Oxide Thin Films from Aqueous Precursors: Enhanced Counterion Removal, Resistance to Water Absorption, and Dielectric Constant
Chemistry of Materials ( IF 7.2 ) Pub Date : 2017-09-19 00:00:00 , DOI: 10.1021/acs.chemmater.7b03585
Keenan N. Woods 1 , Paul N. Plassmeyer 1 , Deok-Hie Park 2 , Lisa J. Enman 1 , Aidan K. Grealish 1 , Brenna L. Kirk 1 , Shannon W. Boettcher 1 , Douglas A. Keszler 2 , Catherine J. Page 1
Affiliation  

Aqueous solution deposition has emerged as a potentially scalable, high-throughput route to functional metal oxide thin films. Aqueous routes, however, generally require elevated processing temperatures to produce fully condensed films that are resistant to water absorption. Herein, we report a low-processing-temperature method for preparing more fully condensed, stable metal oxide films from aqueous precursors. We show that a steam anneal at ≤200 °C reduces residual nitrates in zinc oxide, yttrium aluminum oxide, and lanthanum zirconium oxide (LZO) films. An in-depth study on LZO dielectric films reveals steam annealing also reduces residual chloride content, increases resistance to post-anneal water absorption, eliminates void formation, and enhances the dielectric constant. This investigation demonstrates that steam annealing directly affects the decomposition temperatures and chemical evolution of aqueous precursors, suggesting a general means for producing high-quality films at low processing temperatures.

中文翻译:

来自水性前体的金属氧化物薄膜的低温蒸汽退火:增强的抗衡离子去除能力,抗吸水性和介电常数

水溶液沉积已成为潜在的可扩展的,高通量的功能金属氧化物薄膜的途径。然而,水性途径通常需要升高的加工温度以产生耐水吸收的完全凝结的膜。本文中,我们报道了一种低处理温度的方法,用于从水性前体制备更充分冷凝的稳定金属氧化物膜。我们表明,≤200°C的蒸汽退火可减少氧化锌,氧化钇铝和氧化镧锆(LZO)膜中的残留硝酸盐。对LZO介电膜的深入研究表明,蒸汽退火还可以减少残留的氯化物含量,提高对退火后吸水的抵抗力,消除空隙形成,并提高介电常数。
更新日期:2017-09-20
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