Abstract Copper gallium selenide (CGS) semiconductor thin films are suitable for various optoelectronic devices due to their stoichiometry dependent properties. Tuning of electrical conductivity (0.5–90 S/cm) by compositional variations of CGS thin films prepared by reactive evaporation of the three elements under vacuum is presented here. This p-type absorber material withstands its conductivity type over the entire range of compositional variation. The structure, morphology, elemental composition, chemical states, electrical and optical properties of the thin films are characterized using techniques like X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, UV–visible absorption spectroscopy and Hall effect measurements. Optical studies of the films reveal a three-fold absorption from which crystal field splitting ∼0.06 eV and spin orbit splitting ∼0.09–0.17 eV are determined. The optical fundamental absorption edges of the films vary from 1.6 to 1.67 eV.

中文翻译：

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铜镓硒薄膜的电导率调谐和价带分裂研究

摘要 铜硒化镓 (CGS) 半导体薄膜由于其化学计量相关特性而适用于各种光电器件。这里介绍了通过三种元素在真空下反应蒸发制备的 CGS 薄膜的成分变化来调节电导率（0.5-90 S/cm）。这种 p 型吸收体材料在整个成分变化范围内都能承受其导电类型。使用 X 射线衍射、拉曼光谱、X 射线光电子能谱、扫描电子显微镜、紫外-可见吸收光谱和霍尔效应等技术表征薄膜的结构、形态、元素组成、化学状态、电学和光学性质测量。薄膜的光学研究揭示了三倍吸收，从中可以确定晶体场分裂 ∼0.06 eV 和自旋轨道分裂 ∼0.09–0.17 eV。薄膜的光学基本吸收边在 1.6 到 1.67 eV 之间变化。