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Integrated Cu3N porous nanowire array electrode for high-performance supercapacitors
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2017-09-08 00:00:00 , DOI: 10.1039/c7ta05439d
Fan-Lu Meng 1, 2, 3, 4, 5 , Hai-Xia Zhong 6, 7, 8, 9, 10 , Qi Zhang 6, 7, 8, 9, 10 , Kai-Hua Liu 1, 2, 3, 4, 5 , Jun-Min Yan 1, 2, 3, 4, 5 , Qing Jiang 1, 2, 3, 4, 5
Affiliation  

An integrated Cu3N porous nanowire array directly grown on a Cu foam substrate is developed for the first time by simple nitridation reaction. When used in supercapacitors, benefiting from good conductivity to favor fast charge transport, one-dimensional (1D) porous structure for large specific surface area, and 3D framework for strong stability, this electrode has excellent capacitive performances, such as a high capacitance of 966.7 F g−1 and good stability during prolonged cycle measurements. When constructing an asymmetric supercapacitor opposite to active carbons, excellent performance is also achieved.

中文翻译:

用于高性能超级电容器的集成式Cu 3 N多孔纳米线阵列电极

通过简单的氮化反应,首次开发了直接生长在Cu泡沫基材上的集成Cu 3 N多孔纳米线阵列。当用于超级电容器中时,该电极具有良好的导电性,有利于快速电荷传输,具有大比表面积的一维(1D)多孔结构,以及具有强稳定性的3D框架,具有出色的电容性能,例如966.7的高电容F g -1和延长周期测量期间的良好稳定性。当构建与活性炭相反的不对称超级电容器时,也可以获得出色的性能。
更新日期:2017-09-19
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