Diamond Phase (sp3-C) Rich Boron-Doped Carbon Nanowalls (sp2-C): Physicochemical and Electrochemical Properties,The Journal of Physical Chemistry C

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Diamond Phase (sp3-C) Rich Boron-Doped Carbon Nanowalls (sp2-C): Physicochemical and Electrochemical Properties
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2017-09-19 00:00:00 , DOI: 10.1021/acs.jpcc.7b06365
M. Sobaszek , K. Siuzdak ₁ , J. Ryl , M. Sawczak ₁ , S. Gupta , S. B. Carrizosa , M. Ficek , B. Dec , K. Darowicki , R. Bogdanowicz

Affiliation

The growth of B-CNW with different boron doping levels controlled by the [B]/[C] ratio in plasma, and the influence of boron on the obtained material’s structure, surface morphology, electrical properties, and electrochemical parameters, such as −ΔE and k°, were investigated. The fabricated boron-doped carbon nanowalls exhibit activity toward ferricyanide redox couple, reaching the peak separation value of only 85 mV. The flatband potential and the concentration of boron carriers were estimated in the B-CNW samples using the Mott–Schottky relationship. It was shown that the vertically oriented carbon planes are characterized by p-type conductivity and very high hole-acceptor concentration (3.33 × 10²³ cm^–3 for a highly doped sample), which provides high electrical conductivity. The enhanced electrochemical performance of B-CNWs electrodes is an advantageous feature that can be applied in ultrasensitive detection or energy storage devices.

中文翻译：

金刚石相（sp ³- C）富硼掺杂碳纳米壁（sp ²- C）：物理化学和电化学性质

等离子体中[B] / [C]比控制不同硼掺杂水平的B-CNW的生长，以及硼对所得材料的结构，表面形貌，电性能和电化学参数（如-Δ）的影响E和k °进行了研究。制备的掺硼碳纳米壁对铁氰化物氧化还原对表现出活性，仅达到85 mV的峰分离值。使用Mott-Schottky关系估计了B-CNW样品中的平坦带电势和硼载流子浓度。结果表明，垂直取向的碳平面具有p型导电性和很高的空穴受体浓度（3.33×10 ²³ cm ^–3对于高掺杂样品），可以提供高电导率。B-CNWs电极增强的电化学性能是一个有利的功能，可以应用于超灵敏检测或能量存储设备中。

更新日期：2017-09-19

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