Abstract All transparent photoelectric devices were achieved for the highly-performing photodetectors. The high transparent heterojunction photodetector of the configuration of NiO/ZnO/ITO/PET was realized by using the solid-state sputtering method. All metal oxide layers were formed at room temperature to be applied on the plastic substrate. The ITO layer was directly coated on the PET substrate to work as a transparent conductor. To form the transparent p/n junction, p-type NiO was reactively sputtered following by n-type ZnO deposition onto the ITO. This high visible-range transparent (74.8%) photodetector is extremely sensitive to detect the tiny UV light density of 10 μW/cm2 with the ultra-fast photoresponse time (19 μs) and high-photoresponse ratio (1944) due to the merit of excitonic absorption. The design scheme of zero-bias operating transparent heterojunction can be applied for visible electronic devices and solar cells.

中文翻译：

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透明 NiO/ZnO 异质结用于塑料基板上的超高性能零偏置紫外光电探测器

摘要 高性能光电探测器实现了全透明光电器件。采用固态溅射法实现了NiO/ZnO/ITO/PET构型的高透明异质结光电探测器。所有金属氧化物层均在室温下形成以施加在塑料基材上。ITO层直接涂覆在PET基板上作为透明导体。为了形成透明的 p/n 结，p 型 NiO 被反应溅射，然后 n 型 ZnO 沉积到 ITO 上。这种高可见光范围透明 (74.8%) 光电探测器对探测 10 μW/cm2 的微小紫外光密度非常敏感，具有超快的光响应时间 (19 μs) 和高光响应比 (1944)，这是由于激子吸收。