We establish a detailed phenomenology of photocarrier transport in the copper oxide plane by studying the transient terahertz photoconductivity of ${\mathrm{Sr}}_2{\mathrm{CuO}}_2{\mathrm{Cl}}_2$ and ${\mathrm{YBa}}_2{\mathrm{Cu}}_3{\mathrm{O}}_6$. The peak photoconductivity saturates with fluence, decays on multiple picosecond timescales, and evolves into a state characterized by activated transport. The time dependence shows little change with fluence, indicating that the decay is governed by first-order recombination kinetics. We find that most photocarriers make a negligible contribution to the dc photoconductivity, and we estimate the intrinsic photocarrier mobility to be 0.6–0.7 ${\text{cm}}^2/\text{V}\text{s}$ at early times, comparable to the mobility in chemically doped materials.

中文翻译：

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绝缘铜酸盐的瞬态太赫兹光电导

通过研究瞬态太赫兹光电导率，我们建立了在氧化铜平面上光载流子传输的详细现象学。 $r_{\mathrm{2个}}{\mathrm{氧化铜}}_{\mathrm{2个}}{氯}_{\mathrm{2个}}$ 和 ${\mathrm{Ba}}_{\mathrm{2个}}{铜}_3{\mathrm{Ø}}_6$。峰值光电导率以通量饱和，在多个皮秒的时间尺度上衰减，并演变成以激活的传输为特征的状态。时间依赖性显示出通量几乎没有变化，表明衰变受一阶重组动力学控制。我们发现大多数光电载流子对直流光电导率的贡献可忽略不计，并且我们估计本征光电载流子的迁移率为0.6–0.7${\text{厘米}}^{\mathrm{2个}}/\text{伏特}\text{s}$ 在早期，可与化学掺杂材料中的迁移率相提并论。