In this work, the in situ decoration of CuSCN nanorod thin films with carbon quantum dots (CQDs) was achieved through a one-pot electrochemical deposition process. The hybridization of CQDs would not change the nanorod structure and p-type characteristic of CuSCN thin film. Compared with the pristine CuSCN thin film, the CQDs/CuSCN composite thin film exhibited significantly improved photoelectrochemical (PEC) activities. The photocurrent intensity of the composite thin film electrode was approximately 6.5 times that of the CuSCN thin film electrode. The improved PEC activities could be ascribed to the highly efficient generation, separation and migration of excited charge carriers derived from the decoration of CQDs on the surface of CuSCN nanorods, as verified by the electrochemical impedance spectra (EIS), photoluminescence, charge extraction, intensity-modulated photocurrent spectroscopy (IMPS) and intensity-modulated photovoltage spectroscopy (IMVS) measurements. The superior PEC properties of the CQDs/CuSCN composite thin film make it a promising hole transporting material or photocathode material for practical PEC applications including solar cells and PEC water splitting.

中文翻译：

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用碳量子点原位装饰CuSCN纳米棒阵列以获得高效的光电化学性能

在这项工作中，通过一锅电化学沉积工艺实现了具有碳量子点 (CQD) 的 CuSCN 纳米棒薄膜的原位装饰。CQDs的杂化不会改变CuSCN薄膜的纳米棒结构和p型特性。与原始的 CuSCN 薄膜相比，CQDs/CuSCN 复合薄膜表现出显着提高的光电化学（PEC）活性。复合薄膜电极的光电流强度约为CuSCN薄膜电极的6.5倍。电化学阻抗谱 (EIS)、光致发光、电荷提取、强度调制光电流光谱 (IMPS) 和强度调制光电压光谱 (IMVS) 测量。CQDs/CuSCN 复合薄膜优异的 PEC 特性使其成为一种有前途的空穴传输材料或光电阴极材料，可用于实际 PEC 应用，包括太阳能电池和 PEC 水分解。