Abstract We investigated the growth behavior of Al2O3 using atomic layer deposition (ALD) on the surface of chemical vapor deposition (CVD)-grown graphene and graphene oxide (GO). While selective ALD growth was observed on CVD-grown graphene along defective sites, smooth and continuous films were grown on GO without selective growth. Linear growth of Al2O3 on GO was observed without a nucleation region or growth selectivity. This result indicates that the ALD film growth is more suitable for GO because of the abundant and homogeneously distributed reactive sites over its basal plane. By taking advantage of GO as an ideal substrate for the ALD growth of metal oxides, highly aligned, multiple-stacked, three-dimensional Al2O3/GO structures were fabricated, which showed much better effective gas barrier characteristics (1.73 × 10−4 g/m2day) than that exhibited by pristine single Al2O3 thin films of the same thickness.

中文翻译：

---

用于气体阻隔应用的三维堆叠 Al 2 O 3 /氧化石墨烯

摘要 我们使用原子层沉积 (ALD) 在化学气相沉积 (CVD) 生长的石墨烯和氧化石墨烯 (GO) 的表面上研究了 Al2O3 的生长行为。虽然在 CVD 生长的石墨烯上沿缺陷位点观察到选择性 ALD 生长，但在 GO 上生长光滑且连续的薄膜而没有选择性生长。在没有成核区域或生长选择性的情况下观察到 Al2O3 在 GO 上的线性生长。该结果表明 ALD 膜生长更适合 GO，因为其基面上有丰富且均匀分布的反应位点。通过利用 GO 作为金属氧化物 ALD 生长的理想基材，制造了高度对齐、多层堆叠的三维 Al2O3/GO 结构，显示出更好的有效阻气特性 (1.