Doped Copper Phthalocyanine via an Aqueous Solution Process for Normal and Inverted Perovskite Solar Cells,Advanced Energy Materials

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Doped Copper Phthalocyanine via an Aqueous Solution Process for Normal and Inverted Perovskite Solar Cells
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2017-09-18 , DOI: 10.1002/aenm.201701688
Jin-Miao Wang ₁ , Zhao-Kui Wang ₁ , Meng Li ₁ , Cong-Cong Zhang ₁ , Lu-Lu Jiang ₁ , Ke-Hao Hu ₁ , Qing-Qing Ye ₁ , Liang-Sheng Liao ₁

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Great efforts toward developing novel and efficient hole‐transporting materials are needed to further improve the device efficiency and enhance the cell stability of perovskite solar cells (PSCs). The poor film conductivity and the low carrier mobility of organic small‐molecule‐based hole‐transporting materials restrict their application in PSCs. This study develops an efficient and stable hole‐transporting material, tetrafluorotetracyanoquinodimethane (F₄‐TCNQ)‐doped copper phthalocyanine‐3,4′,4′′,4′′′‐tetra‐sulfonated acid tetra sodium salt (TS‐CuPc) via a solution process, in planar structure PSCs. The p‐type‐doped TS‐CuPc film demonstrates improved film conductivity and hole mobility owing to the strong electron affinity of F₄‐TCNQ. By the F₄‐TCNQ tailoring, the composite film gives the highest occupied molecular orbital level as high as 5.3 eV, which is beneficial for hole extraction. In addition, the aqueous solution processed TS‐CuPc:F₄‐TCNQ precursor is almost neutral with good stability for avoiding the electrode erosion. As a result, the fabricated PSCs employing TS‐CuPc:F₄‐TCNQ as the hole‐transporting material exhibit a power conversion efficiency of 16.14% in a p–i–n structure and 20.16% in an n–i–p structure, respectively. The developed organic small molecule of TS‐CuPc provides the diversification of hole‐transporting materials in planar PSCs.

中文翻译：

通过水溶液工艺对普通和倒钙钛矿型太阳能电池掺杂的酞菁铜

为了进一步提高器件效率并增强钙钛矿型太阳能电池（PSC）的电池稳定性，需要大力开发新颖，高效的空穴传输材料。有机小分子空穴传输材料的差的薄膜电导率和低的载流子迁移率限制了它们在PSC中的应用。这项研究开发了一种高效且稳定的空穴传输材料-掺有四氟_四氰基喹二甲烷（F ₄ -TCNQ）的酞菁铜-3,4'，4'，4''-四磺酸四钠盐（TS-CuPc）通过求解过程，在平面结构的PSC中。p型掺杂的TS-CuPc薄膜由于F ₄ -TCNQ具有很强的电子亲和力，因此具有改善的薄膜电导率和空穴迁移率。由F ₄‐TCNQ量身定制，该复合膜可提供高达5.3 eV的最高占据分子轨道能级，这对于空穴提取是有益的。此外，水溶液处理的TS-CuPc：F ₄ -TCNQ前体几乎是中性的，具有良好的稳定性，可避免电极腐蚀。结果，采用TS-CuPc：F ₄ -TCNQ作为空穴传输材料的预制PSC在ap-i-n结构中的功率转换效率为16.14％，在n-i-p结构中的功率转换效率分别为20.16％。。先进的TS-CuPc有机小分子为平面PSC中的空穴传输材料提供了多样化的选择。

更新日期：2017-09-18

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