Abstract In this study, we fabricated the nitrogen-doped NbZnSnO channel layers by using the sol-gel method. Monoethanolamine (MEA) was used as a nitrogen additive. From the XPS results, the concentration of oxygen vacancies changes as a function of MEA/Nb ratio. A NbZnSnO film with MEA/Nb of 0.2 shows the lowest amount of oxygen vacancies. TFT electrical performance also shows a device with an MEA/Nb ratio of 0.2 possesses a high carrier mobility (7.4 cm 2 V −1 s −1 ) and good bias stress stability. In addition, we also investigated the effect of the aging time of precursor solution on the electrical characteristics of the TFT. After adding MEA, the annealing temperature of the NbZnSnO channels can be reduced, pertaining to the acceleration of the hydrolysis and condensation reaction.

中文翻译：

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使用乙醇胺添加剂制备溶液处理的氮掺杂铌锌锡氧化物薄膜晶体管

摘要 在本研究中，我们采用溶胶-凝胶法制备了氮掺杂的 NbZnSnO 沟道层。单乙醇胺（MEA）用作氮添加剂。根据 XPS 结果，氧空位的浓度随 MEA/Nb 比率的变化而变化。MEA/Nb 为 0.2 的 NbZnSnO 薄膜显示出最低的氧空位量。TFT 电性能还表明MEA/Nb 比为0.2 的器件具有高载流子迁移率（7.4 cm 2 V -1 s -1 ）和良好的偏置应力稳定性。此外，我们还研究了前驱体溶液的老化时间对 TFT 电学特性的影响。添加MEA后，NbZnSnO通道的退火温度可以降低，与水解和缩合反应的加速有关。