Bottom‐Up Single‐Electron Transistors,Advanced Materials

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Bottom‐Up Single‐Electron Transistors
Advanced Materials ( IF 27.4 ) Pub Date : 2017-09-18 , DOI: 10.1002/adma.201702920
Ksenia S. Makarenko ₁ , Zhihua Liu ₁ , Michel P. de Jong ₁ , Floris A. Zwanenburg ₁ , Jurriaan Huskens ₂ , Wilfred G. van der Wiel ₁

Affiliation

As the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom‐up approach for the fabrication of high‐quality single‐electron transistors (SETs) that can easily be contacted electrically in a controllable manner is developed. This approach employs the self‐assembly of Au nanoparticles forming the SETs, and Au nanorods forming the leads to macroscopic electrodes, thus bridging the gap between the nano‐ and microscale. Low‐temperature electron‐transport measurements reveal exemplary single‐electron tunneling characteristics. SET behavior can be significantly changed, post‐fabrication, using molecular exchange of the tunnel barriers, demonstrating the tunability of the assemblies. These results form a promising proof of principle for the versatility of bottom‐up nanoelectronics, and toward controlled fabrication of nanoelectronic devices.

中文翻译：

自下而上的单电子晶体管

随着常规半导体电子器件的缩小尺寸变得越来越具有挑战性，对替代材料系统和制造方法的兴趣正在增长。开发了一种新颖的自下而上的方法来制造高质量的单电子晶体管（SET），该晶体管可以很容易地以可控制的方式进行电接触。这种方法利用了自组装的金纳米粒子的自组装形成SET，而金纳米棒的自组装形成了到宏观电极的引线，从而弥合了纳米级和微米级之间的间隙。低温电子传输测量揭示了示例性的单电子隧穿特性。在制造后，使用隧道势垒的分子交换可以显着改变SET行为，这说明了组件的可调性。

更新日期：2017-09-18

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