Abstract Treatment of graphene growth substrates with H2 has long been known to impact the quality of deposited graphene. However, the parameters for hydrogen treatment that are considered the optimum – very long anneals under low hydrogen concentrations – are often undesirable for practical reasons. In this paper we optimize anneal parameters for fast anneals of

中文翻译：

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短时间、高流量 H 2 退火对石墨烯合成和表面形态的影响以及覆盖率的高空间分辨率评估

摘要 长期以来，人们都知道用 H2 处理石墨烯生长基底会影响沉积石墨烯的质量。然而，被认为是最佳的氢处理参数——在低氢浓度下的非常长的退火——出于实际原因通常是不可取的。在本文中，我们优化了用于快速退火的退火参数