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Probing the Interlayer Exciton Physics in a MoS2/MoSe2/MoS2 van der Waals Heterostructure
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-18 00:00:00 , DOI: 10.1021/acs.nanolett.7b03184 M. Baranowski 1, 2 , A. Surrente 1 , L. Klopotowski 3 , J. M. Urban 1 , N. Zhang 1 , D. K. Maude 1 , K. Wiwatowski 4 , S. Mackowski 4 , Y. C. Kung 5 , D. Dumcenco 5 , A. Kis 5 , P. Plochocka 1
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-18 00:00:00 , DOI: 10.1021/acs.nanolett.7b03184 M. Baranowski 1, 2 , A. Surrente 1 , L. Klopotowski 3 , J. M. Urban 1 , N. Zhang 1 , D. K. Maude 1 , K. Wiwatowski 4 , S. Mackowski 4 , Y. C. Kung 5 , D. Dumcenco 5 , A. Kis 5 , P. Plochocka 1
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Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of interlayer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe2/WSe2 heterostructures. Here we report on the observation of long-lived interlayer exciton emission in a MoS2/MoSe2/MoS2 trilayer van der Waals heterostructure. The interlayer nature of the observed transition is confirmed by photoluminescence spectroscopy, as well as by analyzing the temporal, excitation power, and temperature dependence of the interlayer emission peak. The observed complex photoluminescence dynamics suggests the presence of quasi-degenerate momentum-direct and momentum-indirect bandgaps. We show that circularly polarized optical pumping results in long-lived valley polarization of interlayer exciton. Intriguingly, the interlayer exciton photoluminescence has helicity opposite to the excitation. Our results show that through a careful choice of the TMDs forming the van der Waals heterostructure it is possible to control the circular polarization of the interlayer exciton emission.
中文翻译：
在MoS 2 / MoSe 2 / MoS 2 van der Waals异质结构中探查层间激子物理
堆叠半导体过渡金属二卤化物（TMDs）的原子单分子层已成为工程化其性能的有效方法。原则上，TMD异质结构的交错带排列应导致形成具有长寿命和强大的谷极化的层间激子。但是，仅在MoSe 2 / WSe 2异质结构中同时观察到了这些特征。在这里，我们报告了在MoS 2 / MoSe 2 / MoS 2中长寿命层间激子发射的观察结果三层范德华力异质结构。通过光致发光光谱以及通过分析层间发射峰的时间，激发功率和温度依赖性来确认观察到的跃迁的层间性质。观察到的复杂光致发光动力学表明存在准简并的动量直接带隙和动量间接带隙。我们表明，圆偏振光泵浦导致层间激子的长寿命谷偏振。有趣的是，层间激子的光致发光具有与激发相反的螺旋度。我们的结果表明，通过仔细选择形成范德华异质结构的TMD，可以控制层间激子发射的圆极化。
更新日期：2017-09-18
中文翻译：
在MoS 2 / MoSe 2 / MoS 2 van der Waals异质结构中探查层间激子物理
堆叠半导体过渡金属二卤化物（TMDs）的原子单分子层已成为工程化其性能的有效方法。原则上，TMD异质结构的交错带排列应导致形成具有长寿命和强大的谷极化的层间激子。但是，仅在MoSe 2 / WSe 2异质结构中同时观察到了这些特征。在这里，我们报告了在MoS 2 / MoSe 2 / MoS 2中长寿命层间激子发射的观察结果三层范德华力异质结构。通过光致发光光谱以及通过分析层间发射峰的时间，激发功率和温度依赖性来确认观察到的跃迁的层间性质。观察到的复杂光致发光动力学表明存在准简并的动量直接带隙和动量间接带隙。我们表明，圆偏振光泵浦导致层间激子的长寿命谷偏振。有趣的是，层间激子的光致发光具有与激发相反的螺旋度。我们的结果表明，通过仔细选择形成范德华异质结构的TMD，可以控制层间激子发射的圆极化。
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