Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics,Nano Letters

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Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-18 00:00:00 , DOI: 10.1021/acs.nanolett.7b03435
Hagyoul Bae , Byung Chul Jang , Hongkeun Park , Soo-Ho Jung ₁ , Hye Moon Lee ₁ , Jun-Young Park , Seung-Bae Jeon , Gyeongho Son , Il-Woong Tcho , Kyoungsik Yu , Sung Gap Im , Sung-Yool Choi , Yang-Kyu Choi

Affiliation

Fabric-based electronic textiles (e-textiles) are the fundamental components of wearable electronic systems, which can provide convenient hand-free access to computer and electronics applications. However, e-textile technologies presently face significant technical challenges. These challenges include difficulties of fabrication due to the delicate nature of the materials, and limited operating time, a consequence of the conventional normally on computing architecture, with volatile power-hungry electronic components, and modest battery storage. Here, we report a novel poly(ethylene glycol dimethacrylate) (pEGDMA)-textile memristive nonvolatile logic-in-memory circuit, enabling normally off computing, that can overcome those challenges. To form the metal electrode and resistive switching layer, strands of cotton yarn were coated with aluminum (Al) using a solution dip coating method, and the pEGDMA was conformally applied using an initiated chemical vapor deposition process. The intersection of two Al/pEGDMA coated yarns becomes a unit memristor in the lattice structure. The pEGDMA-Textile Memristor (ETM), a form of crossbar array, was interwoven using a grid of Al/pEGDMA coated yarns and untreated yarns. The former were employed in the active memristor and the latter suppressed cell-to-cell disturbance. We experimentally demonstrated for the first time that the basic Boolean functions, including a half adder as well as NOT, NOR, OR, AND, and NAND logic gates, are successfully implemented with the ETM crossbar array on a fabric substrate. This research may represent a breakthrough development for practical wearable and smart fibertronics.

中文翻译：

纤维相容性的纺织兼容纳米级薄膜涂层工艺在商用织物上的功能电路

基于织物的电子纺织品（e-textiles）是可穿戴电子系统的基本组件，可为计算机和电子应用提供方便的免提访问。然而，电子纺织技术目前面临重大的技术挑战。这些挑战包括：由于材料的微妙特性而造成的制造困难，以及工作时间有限，这是常规的通常在计算架构上使用的结果，带有易耗电的电子组件以及适度的电池存储。在这里，我们报告了一种新颖的聚乙二醇二甲基丙烯酸酯（pEGDMA）-纺织品忆阻非易失性内存逻辑电路，该电路能够实现常态计算，可以克服这些挑战。为了形成金属电极和电阻开关层，使用溶液浸涂法将棉纱束用铝（Al）涂覆，并使用引发的化学气相沉积工艺共形施加pEGDMA。两条涂有Al / pEGDMA的纱线的交点成为晶格结构中的单位忆阻器。pEGDMA纺织忆阻器（ETM）是一种纵横制阵列，使用Al / pEGDMA涂覆的纱网和未处理的纱网交织而成。前者用于有源忆阻器，后者抑制细胞间干扰。我们首次通过实验证明，基本的布尔函数（包括半加法器以及NOT，NOR，OR，AND和NAND逻辑门）已通过ETM交叉开关阵列成功实现在织物基板上。

更新日期：2017-09-18

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