Pb (In_1/2Nb_1/2) O₃-Pb (Sc_1/2Nb_1/2) O₃-PbTiO₃ (PIN-PSN-PT) ternary ceramics with compositions near morphotropic phase boundary (MPB) were fabricated by solid-state-sintering process. Dielectric and piezoelectric properties of xPIN-yPSN-zPT (x = 0.19, 0.23 and z = 0.365, 0.385) ceramics were investigated as a function of temperature, showing high T_r-t and T_c on the order of 160 ~ 200°C and 280 ~ 290°C, respectively. The xPIN-yPSN-0.365PT (x = 0.19 and 0.23) ceramics do not depolarize at the temperature up to 200°C, showing a better thermal stability when compared to the state-of-the-art relaxor-PbTiO₃ systems. A slight variation (<9%) of k_p, k_t, and k₃₃ was observed in the temperature range of 25°C-160°C for xPIN-yPSN-0.385PT (x = 0.19 and 0.23) ceramics. Rayleigh analysis was employed to quantify the contribution of domain wall motion to piezoelectric response, where the domain wall contribution was found to increase with composition approaching MPB for PIN-PSN-PT system.

中文翻译：

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PIN-PSN-PT压电陶瓷的热稳定性和电场引起的应变行为

制备了组成相向相界（MPB）附近的Pb（In _1/2 Nb _1/2）O ₃ -Pb（Sc _1/2 Nb _1/2）O ₃ -PbTiO ₃（PIN-PSN-PT）三元陶瓷通过固态烧结过程。研究了xPIN-yPSN-zPT（x = 0.19，0.23和z = 0.365，0.385）陶瓷的介电和压电性能随温度的变化，显示出较高的T _r-t和T _c分别在160〜200°C和280〜290°C的温度范围内。xPIN-yPSN-0.365PT（x = 0.19和0.23）陶瓷在高达200°C的温度下不会去极化，与最新的松弛剂-PbTiO ₃系统相比，表现出更好的热稳定性。对于xPIN-yPSN-0.385PT（x = 0.19和0.23）陶瓷，在25°C-160°C的温度范围内观察到k _p，k _t和k ₃₃的微小变化（<9％）。瑞利分析被用来量化畴壁运动对压电响应的贡献，其中发现对于PIN-PSN-PT系统，畴壁的贡献随着组成接近MPB而增加。