Abstract Influence of the molecular beam epitaxy (MBE) growth conditions on the electrical properties of the InN epilayers in terms of minimization of the effect of spontaneously formed In nanoparticles was studied. A three-step growth sequence was used, including direct MBE growth of an InN nucleation layer, migration enhanced epitaxy (MEE) of an InN buffer layer, and In-rich MBE growth of the main InN layer, utilizing the droplet elimination by radical-beam irradiation (DERI) technique. The three-step growth regime was found to lead to decreasing the relative amount of In nanoparticles to 4.8% and 3.8% in In-rich and near-stoichiometric conditions, respectively, whereas the transport properties are better for the In-rich growth. Further reduction of the metallic indium inclusions in the InN films, while keeping simultaneously satisfactory transport parameters, is hardly possible due to fundamental processes of InN thermal decomposition and formation of the nitrogen vacancy conglomerates in the InN matrix. The In inclusions are shown to dominate the electrical conductivity of the InN films even at their minimum amount.

中文翻译：

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MBE 生长模式和条件对金属 In 纳米粒子的自发形成和 InN 基体电性能的影响

摘要 研究了分子束外延 (MBE) 生长条件对 InN 外延层电性能的影响，以最大限度地减少自发形成的 In 纳米粒子的影响。使用了三步生长序列，包括 InN 成核层的直接 MBE 生长、InN 缓冲层的迁移增强外延 (MEE) 和主 InN 层的富 In MBE 生长，利用自由基消除液滴光束照射 (DERI) 技术。发现三步生长机制导致在富 In 和接近化学计量条件下 In 纳米粒子的相对量分别降低至 4.8% 和 3.8%，而传输特性对于富 In 生长更好。进一步减少 InN 薄膜中的金属铟夹杂物，在同时保持令人满意的传输参数的同时，由于 InN 热分解的基本过程和 InN 基质中氮空位聚集体的形成，这几乎是不可能的。显示 In 夹杂物即使在其最小量时也支配着 InN 薄膜的电导率。