For practical solution-processed oxide thin-film transistors (TFTs) with cost efficiency, high performance, and long-term environmental reliability, we suggested a novel sol–gel processed rare-metal-free oxide-based semiconductor/insulator [ZnSnO (ZTO)/Al₂O₃] heterostructure channel and chemically stable sol–gel multi-stacking method. In the rare-metal-free ZTO/Al₂O₃ heterostructure, an In- and Ga-free ZTO semiconductor with high chemical durability is employed as an effective electron transport layer. An earth-abundant Al₂O₃ insulator is employed as both an ambient gas molecule barrier in the ZTO back-channel region and a tunneling-induced electron transport layer beneath the source/drain electrodes. In order to minimize inevitable chemical attack coming from acidic and basic precursor solutions during the sol–gel based heterostructure construction, chemically stable sol–gel ZTO/Al₂O₃ heterostructure stacking was successfully demonstrated with a chemically durable Sn-modulated ZTO semiconductor and weakly corrosive pH-engineered Al₂O₃ precursor solution. The proposed rare-metal-free ZTO/Al₂O₃ heterostructure and chemically stable stacking realized sol–gel processed oxide TFT with excellent stability under humidity, temperature, bias voltage, and light exposure. We believe that our novel ZTO/Al₂O₃ heterostructure and chemically stable sol–gel stacking method will provide an interesting route for the fabrication of practical solution-based oxide TFTs with cost efficiency, high performance, and long-term reliability, instead of conventional rare-metal based oxide materials and channel structures with high environmental instability.

中文翻译：

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迈向环境稳定的溶液处理氧化物薄膜晶体管：无金属的无氧化物氧化物半导体/绝缘体异质结构和化学稳定的多层堆叠

对于具有成本效益，高性能和长期环境可靠性的实用溶液处理氧化物薄膜晶体管（TFT），我们提出了一种新型的溶胶-凝胶处理的无金属氧化物的半导体/绝缘体[ZnSnO（ZTO ）/ Al ₂ O ₃ ]异质结构通道和化学稳定的溶胶-凝胶多堆叠方法。在无稀有金属的ZTO / Al ₂ O ₃异质结构中，具有高化学耐久性的无In和Ga的ZTO半导体被用作有效的电子传输层。富含地球的Al ₂ O ₃绝缘体既用作ZTO反向通道区域中的环境气体分子阻挡层，又用作源极/漏极下方的隧穿感应电子传输层。为了最大程度地减少基于溶胶和凝胶的异质结构构建过程中来自酸性和碱性前体溶液的不可避免的化学侵蚀，成功地证明了化学稳定的溶胶-凝胶ZTO / Al ₂ O ₃异质结构堆叠具有化学耐性的Sn调制的ZTO半导体，并且具有弱势pH腐蚀的工程Al ₂ O ₃前体溶液。拟议的无稀土ZTO / Al ₂ O ₃异质结构和化学稳定的叠层实现了溶胶-凝胶处理的氧化物TFT，在湿度，温度，偏置电压和曝光条件下均具有出色的稳定性。我们相信，我们新颖的ZTO / Al ₂ O ₃异质结构和化学稳定的溶胶-凝胶堆叠方法将为制造具有成本效益，高性能和长期可靠性的基于溶液的氧化物TFT提供一条有趣的途径，而不是代替传统的基于稀土金属的氧化物材料和具有高环境不稳定性的通道结构。