Nanoporous Materials: Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact (Adv. Mater. 35/2017),Advanced Materials

当前位置： X-MOL 学术 › Adv. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Nanoporous Materials: Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact (Adv. Mater. 35/2017)
Advanced Materials ( IF 27.4 ) Pub Date : 2017-09-15 , DOI: 10.1002/adma.201770249
Haifeng Ling ₁ , Mingdong Yi ₁ , Masaru Nagai ₂ , Linghai Xie ₁ , Laiyuan Wang ₁ , Bo Hu ₁ , Wei Huang _{1,

2}

Affiliation

The understanding of the growth kinetics of conductive filaments in soft polymers is crucial to achieve controllable and reliable resistive random access memory (RRAM). A simple solution‐processed and cone‐shaped contact method is developed by Mingdong Yi, Linghai Xie, Wei Huang, and co‐workers in article number 1701333. The nanoscale engineering of a resistance‐switching layer opens the possibility of high‐performance flexible memory.

中文翻译：

纳米多孔材料：通过锥形积分接触器的一步集成实现可控的有机电阻切换（Adv。Mater。35/2017）

了解软聚合物中导电丝的生长动力学对于实现可控和可靠的电阻式随机存取存储器（RRAM）至关重要。易明东，谢凌海，黄伟和他的同事在文章编号1701333中开发了一种简单的溶液处理和锥形接触方法。电阻转换层的纳米级工程化为高性能柔性存储器的开发提供了可能性。

更新日期：2017-09-15

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文本刊介绍/投稿指南11