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Nearly Blinking-Free, High-Purity Single-Photon Emission by Colloidal InP/ZnSe Quantum Dots
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-14 00:00:00 , DOI: 10.1021/acs.nanolett.7b02634
Vigneshwaran Chandrasekaran 1 , Mickaël D. Tessier 1 , Dorian Dupont 1 , Pieter Geiregat 1 , Zeger Hens 1 , Edouard Brainis 1
Affiliation  

Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as single-photon emitters. Single-particle spectroscopy of 10 nm QDs with 3.2 nm cores reveals strong photon antibunching attributed to fast (70 ps) Auger recombination of multiple excitons. The QDs exhibit very good photostability under strong optical excitation. We demonstrate that the antibunching is preserved when the QDs are excited above the saturation intensity of the fundamental-exciton transition. This result paves the way toward their usage as high-purity on-demand single-photon emitters at room temperature. Unconventionally, despite the strong Auger blockade mechanism, InP/ZnSe QDs also display very little luminescence intermittency (“blinking”), with a simple on/off blinking pattern. The analysis of single-particle luminescence statistics places these InP/ZnSe QDs in the class of nearly blinking-free QDs, with emission stability comparable to state-of-the-art thick-shell and alloyed-interface CdSe/CdS, but with improved single-photon purity.

中文翻译:

胶体InP / ZnSe量子点几乎无闪烁,高纯度单光子发射

最近使用改进的合成方法生产的胶体核/壳InP / ZnSe量子点(QD),在生命科学应用以及作为单光子发射器的集成量子光子学和量子信息处理中具有巨大的潜力。具有3.2 nm核心的10 nm QD的单粒子光谱显示出强光子抗聚束性,归因于多种激子的快速(70 ps)俄歇复合。在强光激发下,量子点表现出非常好的光稳定性。我们证明,当量子点被激发到基波激子跃迁的饱和强度以上时,抗聚束作用得以保留。这一结果为它们在室温下用作高纯度按需单光子发射器铺平了道路。与以往不同,尽管有强大的俄歇封锁机制,InP / ZnSe量子点还显示出非常小的发光间歇性(“闪烁”),并且具有简单的开/关闪烁模式。对单粒子发光统计数据的分析将这些InP / ZnSe量子点置于几乎不闪烁的量子点类别中,其发射稳定性可与最新的厚壳和合金界面CdSe / CdS媲美,但具有改进的性能单光子纯度。
更新日期:2017-09-15
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