High-Quality Monolithic Graphene Films via Laterally Stitched Growth and Structural Repair of Isolated Flakes for Transparent Electronics,Chemistry of Materials

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High-Quality Monolithic Graphene Films via Laterally Stitched Growth and Structural Repair of Isolated Flakes for Transparent Electronics
Chemistry of Materials ( IF 7.2 ) Pub Date : 2017-09-14 00:00:00 , DOI: 10.1021/acs.chemmater.7b02348
Hongyan Sun _{1,

2} , Xinming Li _{3,

4} , Yuanchang Li ₅ , Guoxin Chen ₁ , Zhiduo Liu ₁ , Fakhr E. Alam ₁ , Dan Dai ₁ , Li Li ₃ , Li Tao ₄ , Jian-Bin Xu ₄ , Ying Fang ₃ , Xuesong Li ₆ , Pei Zhao ₇ , Nan Jiang ₁ , Ding Chen ₂ , Cheng-Te Lin _{1,

8}

Affiliation

Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China 315201
College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
National Center for Nanoscience and Technology, Beijing 100190, P. R. China
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, China
Advanced Research Institute for Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, P. R. China
State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu, China
Institute of Applied Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310012, P. R. China
University of Chinese Academy of Sciences, 19 A Yuquan Road, Shijingshan District, Beijing 100049, P. R. China

Exfoliation of graphene flakes in solution is a high-yield and low-cost synthesis method, but the quality of the obtained graphene flakes is not high, because of the presence of functional groups and structural defects. Therefore, the ability to synthesize high-quality graphene with excellent electrical properties is desirable for electronic applications. Here, we present a facile and rapid annealing approach with nickel for structural repair in isolated graphene flakes on rough insulating substrates, accompanied by lateral stitching of the isolated parts to form a continuous and monolithic film. This process involves the active carbon species being coalesced at the desaturation edge of graphene flakes. Meanwhile, the defects in graphene can be also repaired to improve its crystal quality and electrical properties. Significantly, the carrier mobility of graphene with excellent structural properties is >1000 cm² V^–1 s^–1 on average, nearly 10 times higher than that of the process with copper or 100 times higher than that of graphene via mere annealing. This approach to high-quality graphene on rough insulating substrates, with transfer-free and well-adapted characteristics, is promising for electronic and optoelectronic applications.

中文翻译：

通过横向缝制生长和隔离透明电子薄片的结构修复获得高质量的单片石墨烯薄膜

石墨烯薄片在溶液中的剥落是一种高产率且低成本的合成方法，但是由于存在官能团和结构缺陷，因此获得的石墨烯薄片的质量不高。因此，合成具有优异电性能的高质量石墨烯的能力是电子应用所希望的。在这里，我们提出了一种用于镍的简便快速退火方法，用于在粗糙的绝缘基板上的隔离石墨烯薄片中进行结构修复，同时对隔离部分进行横向缝合以形成连续的整体膜。该过程涉及在石墨烯薄片的去饱和边缘上聚结的活性碳物质。同时，还可以修复石墨烯中的缺陷以改善其晶体质量和电性能。显着地，平均而言，平均² V ^–1 s ^–1，比使用铜的工艺高10倍，比仅通过退火的石墨烯高100倍。这种在粗糙绝缘基底上获得高质量石墨烯的方法具有无转移且适应性强的特点，对于电子和光电应用是有前途的。

更新日期：2017-09-15

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